This article focuses on recent developments made in the field of siloxane and carbosiloxane dendrimers with the silicon atoms as the branching (1 → 2, 1 → 3, or 1 → 4) points. It attempts to treat in a comprehensive way the divergent growth method for the synthesis of Si–O‐ and Si–O–C‐based dendrimers, including their reaction chemistry, their theoretical and physical descriptions, as well as their potential applications in the area of materials science.