Cardiff Model Utilization for Predicting the Response of Multiple-Input Power Amplifiers

Azad, Ehsan; Quaglia, Roberto; Chadhary, Kauser; Bell, James; Tasker, P.J.

doi:10.1109/mms55062.2022.9825516

Cited by 3 publications

(1 citation statement)

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“…Therefore, we consider extending the original single-input Cardiff model to two-tone or multi-tone inputs to model mixed-order and intermodulation products [ 25 ]. It can also be used to predict the behavior of a multi-input single-output amplifier (MISO PA) [ 26 ]. In this model, there are at least two interacting excitation signals with different amplitudes and phases, which can be expressed as:

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Section: Polynomial Based Behavior Modelmentioning

confidence: 99%

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Li,

Su,

Wang

et al. 2023

Micromachines

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This review presents a concise overview of RF (radio frequency) power transistor behavior models, which is crucial for optimizing RF performance in high-frequency applications like wireless communication, radar, and satellites. The paper highlights the significance of accurate modeling in understanding transistor behavior and traces the evolution of behavior modeling techniques. Different behavior modeling strategies, such as LUT (look-up table) based models, polynomial equation-based models, and machine learning based models, are discussed along with their unique characteristics and modeling challenges. The review explores the difference between behavior models and the conventional empirical or physics-based modeling approaches, addressing the challenges of the accurate characterization of transistors at high frequencies and power levels. This paper concludes with an outlook of emerging trends, such as physical models combined with behavior models, shaping the future of RF power transistor modeling for more efficient communication systems.

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Section: Polynomial Based Behavior Modelmentioning

confidence: 99%