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This paper presents a novel approach to incorporate gate bias voltage variations into the Cardiff behavioural model formulation. In particular, it is observed that the model coefficients can be expressed effectively as a linear function of bias voltage. As a result, the intensity of the load-pull measurement can decrease up to 80 % as the interpolation of the data with respect to the gate bias voltage can be exploited. The experiment was done on a 4 W GaN technology on-wafer device and the result is verified on 0.2 W GaAs technology device.

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This paper explores the use of the Cardiff nonlinear behavioral model to characterize the response of multipleinput power amplifiers. In particular, a case study is presented on a 300 W load modulated balanced amplifier operating at 2.1 GHz. The model mathematical formulation is presented, and the comparison between original data and model shows an error below 3%. More importantly, it is shown that the model can accurately interpolate between characterization points allowing a reduction of up to 96% of the points needed to accurately predict the model behavior. This significantly reduces the simulation and measurement time for multiple-input PA's whilst attempting to determine the optimal driving conditions.