Carrier-based compact modeling of charge and capacitance of long channel undoped symmetric double-gate MOSFETs

Abstract

Carrier-based compact modeling of terminal charges and intrinsic trans-capacitances of a long channel undoped symmetric double-gate MOSFET is presented in this paper. The explicit expressions for the terminal charges are obtained from a simplified carrier-based drain current model and the current continuity principle. Then analytic trans-capacitances are derived in terms of the charges at the source and drain ends. The validity of the analytic terminal charges and trans-capacitances is also verified by 2D numerical analysis proving the accuracy of the compact model presented here.