Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect

Zhang, Lining; Zhang, Jian; Song, Yan; Lin, Xinnan; He, Jin; Chan, Mansun

doi:10.1016/j.microrel.2010.04.005

Cited by 10 publications

(5 citation statements)

References 22 publications

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“…To simplify the obtained formulae the constant mobility in the Sallese model was replaced with voltage dependent effective mobility using the same mobility models as before but replacing the position dependent mobile charge with an effective value. The simplified models were then compared with their more accurate counterparts indicating a very good agreement in the case of mobility model (8) and thus validating the proposed description of effective mobility.…”

Section: Discussionmentioning

confidence: 68%

“…Moreover, a very good agreement between the modified 'model 1' and its simplified version is obtained in the case of both current and transconductance over a wide range of the applied voltages. This indicates that mobility model (8) with effective mobile charge calculated according to (17) is a good approximation of effective mobility.…”

Section: Resultsmentioning

confidence: 73%

“…The majority of the existing compact models of the drain current of a DGMOSFET [3][4][5][6][7][8][9] are derived assuming an effective mobility, independent of the position in the channel. Responding to this problem the Authors have modified the model 3 of I-V characteristics of a symmetrical, undoped DGMOSFET, so that it includes the above mentioned phenomenon.…”

Section: Introductionmentioning

confidence: 99%

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Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Łukasiak

Majkusiak

2013

SPIE Proceedings

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Drain current and transconductance of a symmetrical, undoped double-gate MOSFET is modeled for the first time with mobility depending on both the applied voltage and position in the channel leading to analytical formulae. The obtained models are compared with simplified formulae assuming position-independent effective mobility. Good agreement is obtained in the case of one of the selected mobility models.

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Section: Discussionmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

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Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Łukasiak

Majkusiak

2013

SPIE Proceedings

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“…One of the parameters that improves the short-channel effects and controls the threshold voltage is the channel-doping concentration; for this reason, researchers often apply channel doping of a uniform concentration to control the short-channel effects in MOSFETs [15][16][17][18]; moreover, it must be noted that the nature of the actual in-practice transistor-channel doping profile becomes closer to that of the Gaussian profile due to the ion-implantation stages that are required during the fabrication process [19][20][21]. For this article, the Gaussian-channel doping profile that is used to control the short-channel effects in the DG MOSFET are therefore investigated with the use of a twodimensional (2D) quantum simulation, whereby the MOSFETchannel length is 9 nm and the MOSFET-channel thickness is 3 nm.…”

Section: Introductionmentioning

confidence: 99%

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Charmi¹

2016

Transactions on Electrical and Electronic Materials

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This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green's function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

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“…Researchers have solved the 1-D Poisson equation to derive analytical expressions for the channel potential, threshold voltage and current (Lo et al, 2007;Shih and Wang, 2009). Researchers have also paid their attention to propose analytical expressions of threshold voltage and the current using charge-based approach (Zhang et al, 2010;Jazaeri et al, 2018) on the cost of nonphysical approximations which compromise the physical behavior of the device. He et al (2007) and Liu et al (2008) have proposed analytical models of the surface potential, threshold voltage and current using carrier-based approach for symmetric undoped DG MOSFET.…”

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confidence: 99%

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

Singh

2019

COMPEL

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Purpose This study aims to develop a compact analytical models for undoped symmetric double-gate MOSFET based on carrier approach. Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects, ideal subthreshold slope and free dopant-associated fluctuation effects. DG MOSFET is of two types: the symmetric DG MOSFET with two gates of identical work functions and asymmetric DG MOSFET with two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the body of DG MOSFETs is usually undoped because the undoped body greatly reduces source and drain junction capacitances, which enhances the switching speed. Highly accurate and compact models, which are at the same time computationally efficient, are required for proper modeling of DG MOSFETs. Design/methodology/approach This paper presents a carrier-based approach to develop a compact analytical model for the channel potential, threshold voltage and drain current of a long channel undoped symmetric DG MOSFETs. The formulation starts from a solution of the 2-D Poisson’s equation in which mobile charge term has been included. The 2-D Poisson’s equation in rectangular coordinate system has been solved by splitting the total potential into long-channel (1-D Poisson’s equation) and short-channel components (remnant 2-D differential equation) in accordance to the device physics. The analytical model of the channel potential has been derived using Boltzmann’s statistics and carrier-based approach. Findings It is shown that the metal gate suppresses the center potential more than the poly gate. The threshold voltage increases with increasing metal work function. The results of the proposed models have been validated against the Technology Computer Aided Design simulation results with close agreement. Originality/value Compact Analytical models for undoped symmetric double gate MOSFETs.

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Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect

Cited by 10 publications

References 22 publications

Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

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