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Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schrödinger equation within the non-equilibrium Green's function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.

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