Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

Abstract

Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schrödinger equation within the non-equilibrium Green's function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

“…The gate-tunneling in the MOSFETs can be reduced with the use of the high-k gate dielectric [12][13][14], while in a MOSFET with a channel length of approximately 10 nm, the off-current is a salient value that leads to an increase of the sub-threshold swing (SS) and a lowering of both the drain-induced barrier and the threshold voltage. One of the parameters that improves the short-channel effects and controls the threshold voltage is the channel-doping concentration; for this reason, researchers often apply channel doping of a uniform concentration to control the short-channel effects in MOSFETs [15][16][17][18]; moreover, it must be noted that the nature of the actual in-practice transistor-channel doping profile becomes closer to that of the Gaussian profile due to the ion-implantation stages that are required during the fabrication process [19][20][21].…”