Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Charmi, Morteza; Orouji, Ali A.; Mashayekhi, Hamid Reza

doi:10.1016/j.mssp.2012.09.019

Cited by 4 publications

(1 citation statement)

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“…The current research in this field is largely geared toward an increasing of the device density through an aggressive scaling of the device-feature sizes [1], and an improvement of the MOSFETstructure performances such as those of the double-gate (DG) MOSFETs [2][3][4], nano-wire FETs [5][6][7], nanoscale FinFETs [8,9], and nano-tube transistors [10]. As the channel length of the MOSFETs continues to shrink to several tens of nanometers, the source-to-drain and gate-tunneling of these near-ballistic devices and the inversion layers that are of a several-nanometer thickness, which are in the MOSFETs, become important issues [11].…”

Section: Introductionmentioning

confidence: 99%

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Charmi¹

2016

Transactions on Electrical and Electronic Materials

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This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green's function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

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