Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region

Zhang, Fanglong; Yang, Chao; Su, Yan; Wang, Dejun

doi:10.1016/j.apsusc.2020.145889

Cited by 20 publications

(6 citation statements)

References 41 publications

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“…This can be achieved by tuning the material composition, crystal structure, and processing conditions to control the concentration and distribution of defects in the material. The of OV can be evaluated using the expression 67 – 70 as, , where and represent the total energy of the OV-defected and pristine structures, respectively. The number of atoms necessary to create OV is n .…”

Section: Resultsmentioning

confidence: 99%

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Islam,

Lee,

Ganguli

et al. 2023

Sci Rep

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The resistive switching behavior in Ta2O5 based memristors is largely controlled by the formation and annihilation of conductive filaments (CFs) that are generated by the migration of oxygen vacancies (OVs). To gain a fundamental insight on the switching characteristics, we have systematically investigated the electrical transport properties of two different Ta2O5 polymorphs ($$\epsilon$$ ϵ -Ta2O5 and λ-Ta2O5), using density functional theory calculations, and associated vacancy induced electrical conductivity using Boltzmann transport theory. The projected band structure and DOS in a few types of OVs, (two-fold (O2fV), three-fold (O3fV), interlayer (OILV), and distorted octahedral coordinated vacancies (OεV)) reveal that the presence of OILV would cause Ta2O5 to transition from a semiconductor to a metal, leading to improved electrical conductivity, whereas the other OV types only create localized mid-gap defect states within the bandgap. On studying the combined effect of OVs and Si-doping, a reduction of the formation energy and creation of defect states near the conduction band edge, is observed in Si-doped Ta2O5, and lower energy is found for the OVs near Si atoms, which would be advantageous to the uniformity of CFs produced by OVs. These findings can serve as guidance for further experimental work aimed at enhancing the uniformity and switching properties of resistance switching for Ta2O5-based memristors.

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Section: Resultsmentioning

confidence: 99%

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Islam,

Lee,

Ganguli

et al. 2023

Sci Rep

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“…[ 19 ] Consentient with literature data, [ 16,17 ] our XPS analyses have shown the existence of defects originating from Ge clusters and nonstoichiometric composition of GeO x . As oxygen vacancy defects can capture holes and electrons to form hole traps, [ 21 ] then the NC effect can be thought to be originating from dynamics of these traps. This property is important for the reduction of the noise and parasitic capacitance effect.…”

Section: Resultsmentioning

confidence: 99%

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Algarni

Qasrawi

Khusayfan

2021

Physica Status Solidi (a)

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Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10−5 mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss (Lnormalr) and voltage standing wave ratios (VSWRs) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, Lnormalr value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.

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“…Silicon interstitial defects (Si-Si-Si and Si-Si-O configurations) near SiC/SiO 2 at SiO 2 are established, and their charge trapping processes and energy level distributions (figure 14) are studied [75]. Si-Si-Si and Si-Si-O defect configurations can trap electrons and holes, leading to V th instability in SiC MOS devices.…”

Section: Oxide Trapsmentioning

confidence: 99%

Bias temperature instability in SiC metal oxide semiconductor devices

Yang¹,

Wei²,

Wang³

2021

J. Phys. D: Appl. Phys.

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Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC MOSFET and V fb in MOS capacitor after the device is operated at a high temperature, seriously affects device reliability and limits further commercial applications. These instabilities are mainly attributed to charge trapping at and near the SiC/SiO 2 interface and mobile ions in a gate oxide. The consequences of V th instability are serious and can worsen the performance and lifetime of SiC MOS devices. In this review, the SiC/SiO 2 interface issue is introduced, and BTI occurring in current SiC MOS devices is described in detail. V th /V fb instability behavior induced by measurement and stress conditions, microscopic defects and instability mechanisms, recent measurement techniques of near-interfacial oxide traps, and BTI improvement resulting from the fabrication processes are described. BTI improvement mainly involves the control of charge trapping and movements of ions. The fabrication processes are related to oxidation and pre-and post-oxidation treatments. This review can help deepen our understanding of BTI and reduce its influence on SiC MOS devices performance.

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Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region

Cited by 20 publications

References 41 publications

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Bias temperature instability in SiC metal oxide semiconductor devices

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Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region

Cited by 20 publications

References 41 publications

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics

Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Bias temperature instability in SiC metal oxide semiconductor devices

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Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices