Design and Characterization of ZnSe/GeO₂ Heterojunctions as Bandstop Filters and Negative Capacitance Devices

Abstract

Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10−5 mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss (Lnormalr) and voltage standing wave ratios (VSWRs) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, Lnormalr value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.

Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies

“…× 100%, between the hexagonal lanthanum substrates and cubic CuSe along the 𝑎 −and 𝑐 −axis are 33.3% and 114.6%, respectively. Large lattice mismatches are mentioned resulting in interfacial stresses and forms three dimensional quantum confinements [7,8]. Three-dimensional quantum confinement is mentioned capable of altering radically the nonlinear optical properties of semiconductors in the transparency regions [9].…”

Effect of Lanthanum Substrates on the Structural, Optical and Electrical Properties of Copper Selenide Thin Films Designed for 5G Technologies

“…× 100%, between the hexagonal lanthanum substrates and cubic CuSe along the 𝑎 −and 𝑐 −axis are 33.3% and 114.6%, respectively. Large lattice mismatches are mentioned resulting in interfacial stresses and forms three dimensional quantum confinements [7,8]. Three-dimensional quantum confinement is mentioned capable of altering radically the nonlinear optical properties of semiconductors in the transparency regions [9].…”

“…When La replaces glass, the calculated lattice constant of the cubic CuSe ( = 5.697 Å) decreases to = 5.656 Å. XRD patterns of (glass, La)/CuSe contained a peak centered at 2 = 24.45 which are related to the orthorhombic phase of CuSe ((PDF card no: 2027-0184). In addition, The XRD patterns of CuSe coated onto lanthanum substrates displayed some peaks of hexagonal lanthanum ( = Large lattice mismatches are mentioned resulting in interfacial stresses and forms three dimensional quantum confinements [7,8]. Three-dimensional quantum confinement is mentioned capable of altering radically the nonlinear optical properties of semiconductors in the transparency regions [9].…”