Carrier capture and relaxation through a continuum background in InAs quantum dots

Bogaart, EW Erik; Haverkort, Jem Jos; Mano, Takaaki; Nötzel, R.

doi:10.1016/j.physe.2005.12.046

Cited by 7 publications

(13 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…⌬R = ‫ץ‬R / ‫ץ‬ 13,14,22 We observe that the carrier-induced reflection change is linear proportional to the QD density of states ͑DOS͒, ⌬R ϳ DOS, which has been shown in Ref. 17. In addition, as has been discussed in Ref.…”

Section: B Experimental Detailssupporting

confidence: 68%

“…17 After the deposition of a 295 nm GaAs buffer layer at 580°C, the temperature was lowered to 490°C for the growth of the multiple QD layers. A 30 nm GaAs layer was deposited before the growth of the five layers of QDs.…”

Section: A Sample Growthmentioning

confidence: 99%

“…With increasing carrier density above 2 ϫ 10 12 carriers/ cm 2 , the signal amplitude starts to deviate from the linear behavior and begins to saturate. Since the TRDR signal monitors the population of the QD energy states, 17 we ascribe the onset of the saturation to the finite DOS of the QD ensemble. A strong carrier-densitydependent degree of the polarization anisotropy of the reflectivity, ⌬R , is observed, by using Eq.…”

Section: B Excitation Density Dependencementioning

confidence: 99%

See 2 more Smart Citations

Dichroic reflection of InAs∕GaAs quantum dots

Bogaart

Haverkort

Eijkemans

et al. 2005

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Polarization-resolved reflection measurements are performed on nearly circular InAs/ GaAs quantum dots ͑QDs͒ by means of time-resolved differential reflection spectroscopy. We observe linear polarization anisotropy of the differential absorption, revealing the dichroic character of the QD reflection. The observed magnitude of the dichroism is ⌰ ͓110͔ / ⌰ ͓110͔ = 1.07. The polarization has a preferential direction orientated along the ͓110͔ crystal axis, which is confirmed by polarization-resolved photoluminescence. We observe that the polarization anisotropy of the reflectivity is strongly dependent on the pump excitation density, decreasing from = 0.14 at low excitation to = 0.06 at high excitation. The pump power dependence is described by a binomial model taking into account the statistics of carrier capture into a limited number of QDs.

show abstract

Section: B Experimental Detailssupporting

confidence: 68%

Section: A Sample Growthmentioning

confidence: 99%

Section: B Excitation Density Dependencementioning

confidence: 99%

See 1 more Smart Citation

Dichroic reflection of InAs∕GaAs quantum dots

Bogaart

Haverkort

Eijkemans

et al. 2005

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…3, is expressed as 14,33 5 K in which L͑ ͒ is a Lorentzian line shape function of a single isolated QD modeling the homogeneous broadening, and LЈ͑ ͒ is its first derivative. Combining the measured reflectivity spectrum ⌬R / R 0 ͑ ͒ with the pump excitation dependence of the emission rate ⌬⌫͑ ͒, as deduced from Figs.…”

Section: Resultsmentioning

confidence: 99%

Anomalous exciton lifetime by electromagnetic coupling of self-assembled InAs/GaAs quantum dots

Bogaart

Haverkort

2010

Journal of Applied Physics

View full text Add to dashboard Cite

We report on the experimental observation of a hitherto ignored long-range electromagnetic coupling between self-assembled InAs/GaAs quantum dots ͑QDs͒. A 12 times enhancement of the QD exciton lifetime is observed by means of time-resolved differential reflection spectroscopy. The enhancement is due to local field effects within the QD ensemble. The electromagnetic coupling of the QDs results in a collective polarizability, and is observed as a suppression of the emission rate. Our results reveal that the mutual coupling strength can be optically tuned by varying the pump excitation density. This enables us to optically tune the exciton lifetime.

show abstract

“…2 (b) displays the maximum probe transmission (in dB) as a function of the input power (in dBm) together with a linear fit showing a slope of 2, confirming the quadratic dependence of probe transmission on pump power due to its TPA origin. The carrier capture mechanism from higher energy levels (GaAs barriers, wetting layer) to the ground state, either using the excited state as an intermediate state or directly through the continuum background [5], will be investigated shortly by resonantly probing the excited state while pumping the ground state. Next we shall discuss the effect of setting the pump at 1290nm, resonant to QDs ground state.…”

Section: Resultsmentioning

confidence: 99%