Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

Abstract

Recently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆Wn) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.

Recent advances in neuromorphic transistors for artificial perception applications

“…Furthermore, a two-dimensional field-effect transistor based on back-gate structure can adjust channel current, which makes it possible to realize the simulation of synaptic plasticity. With highly gate-modulated and photosensitive of two-dimensional semiconductor material indium selenide (InSe), Nie et al [ 92 ] fabricated a carrier-capture-assisted optoelectronic neuromorphic device based on van der Waals materials with back-gate structure, as shown in Figure 4(a) . Owing to the trap capture/release characteristics of InSe/SiO 2 interface, the highly gate-modulated photoresponse supported the emulation of effective/stable/ineffective feature.…”

“… (a) Schematic sketch of the back-gate InSe-based neuromorphic device and schematic diagram of synaptic response mechanism. Reproduced with permission [ 92 ]. Copyright 2021, springer nature.…”

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

“… − After the illumination, the trapped photogenerated holes are slowly released. In addition, part of the electrons captured at the interface will be released into the a -IAZO layer after the light is turned off (Figure b). , Therefore, the current does not return to its original value immediately after the illumination and undergoes a relaxation process instead. …”

Properties, Synthesis, and Device Applications of 2D Layered InSe

“…[32,36] In addition, in recent years, InSe has also been applied to nonvolatile memory, artificial synapse, and neural network computing. [37][38][39][40][41] Motivated by the plentiful research activities of layered InSe, we report a review to capture fascinating discoveries of InSe. This review mainly focuses on emerging properties, various synthesis strategies, and potential applications (Figure 1).…”