Carrier–carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

Abstract

We describe carrier–carrier interaction in self-assembled In0.5Ga0.5As quantum dots (QDs) at room temperature. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density are investigated through near-field single quantum dot photoluminescence spectroscopy. From the viewpoint of excitation density dependent spectral broadening of the ground state emission, we discuss the dephasing process in QDs due to Coulomb interaction.

Influence of carrier-carrier and carrier-phonon correlations on optical absorption and gain in quantum-dot systems

“…In Refs. [20] and [21] PL spectroscopy measurements revealed homogeneous linewidths of several meV at room temperature. Comparable results have also been found by four-wave mixing experiments [15].…”

“…1(a) of Ref. [21] optical spectra are displayed for different excitation intensities. Although a direct comparison of the excitation dependence is not possible, due to uncertainties in the carrier densities generated in those experiments, the general features of the spectra are identical.…”

Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots

“…Heitz et al observed a similar behavior for the InAs/GaAs QDs [25], was related to the band-gap shrinkage of the dot and/or barriers due to the Coulomb interaction between carriers [25,26] band-gap renormalisation (BGR). The peak of the PL signal observed for energies below…”

Incorporating structural analysis in a quantum dot Monte-Carlo model

“…While this approach provides thorough calculation of free-carrier effects, it has been noted that finding the exact parameters which will simulate experimental results remains difficult to produce a match. [10][11][12] Another model developed,…”