Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots

Growth of InAs quantum dots (QDs) in metamorphic InGaAs matrix for long‐wavelength laser applications on GaAs substrates by molecular beam epitaxy (MBE) is demonstrated. Metamorphic InGaAs matrix is based on a five‐step graded InGaAs metamorphic buffer layer (MBL) with a final indium composition of about 40%. Reciprocal space mapping for the asymmetrical (−2 2 4) and (2 2 4) reflections along the [−1 1 0] and [1 1 0] directions shows anisotropic relaxation along these two directions. The metamorphic InGaAs matrix is more relaxed along [−1 1 0] direction but nearly fully strained along [1 1 0] direction. InAs QDs are embedded in two InGaAs confining layers with the same indium composition. Emission at 1.6 μm from metamorphic InAs QDs and 1.42 μm emission from metamorphic InGaAs matrix at room temperature (RT) are observed, respectively. The activation energy of ≈94.6 meV is obtained.

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Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

Zhan

Ishida

Kwoen

et al. 2019

Physica Status Solidi (b)

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Temperature and excitation power dependence of photoluminescence and electrical characterization of Ni‐passivated porous silicon

Rahmani

Amdouni

Zaïbi

et al. 2021

J Mater Sci: Mater Electron

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Structural and physical properties of InAlAs quantum dots grown on GaAs

Vasile

Daly²,

Crǎciun

et al. 2018

Physica B: Condensed Matter

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Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots

Abstract: , et al.. Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots. Superlattices and Microstructures, Elsevier, 2017, 104, pp.321-330. <10.1016/j.spmi.2017.02.043>. M A N U S C R I P T A C C E P T E D

Cited by 5 publications

References 32 publications

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

Temperature and excitation power dependence of photoluminescence and electrical characterization of Ni‐passivated porous silicon

Structural and physical properties of InAlAs quantum dots grown on GaAs

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