Carrier density dependence of 1/<i>f</i>noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

Pellegrini, Bruno; Marconcini, Paolo; Macucci, Massimo; Fiori, Gianluca; Basso, Giovanni

doi:10.1088/1742-5468/2016/05/054017

Cited by 12 publications

(17 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2b and 2d. It is also interesting to note the drop in contact noise magnitude in the inhomogeneous regime, which could be due to the dominance of McWhorter-type number fluctuation noise [8,15,16,18,51], rather than just mobility fluctuations in the charge transfer region.…”

Section: Noise In High Mobility Graphene Hybridsmentioning

confidence: 99%

Current crowding mediated large contact noise in graphene field-effect transistors

et al. 2016

View full text Add to dashboard Cite

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices.

show abstract

Section: Noise In High Mobility Graphene Hybridsmentioning

confidence: 99%

Current crowding mediated large contact noise in graphene field-effect transistors

et al. 2016

View full text Add to dashboard Cite

show abstract

“…In order to compute ΔN and ΔP, we use the following approach [72] (which differs from that used in Ref. [71] but leads to similar results).…”

Section: Simulation Modelmentioning

confidence: 99%

“…An interesting theory [71] exploited the electrostatic screening of the trapped carriers and the peculiar properties of the graphene band structure to explain the observed fea-tures. We have developed a different approach [72] that leads to analogous results, exploiting a model based on the conservation of charge neutrality and on the mass action law (which has to be satisfied if the main fluctuations in flicker noise are slow compared to the generation-recombination times of carriers).…”

Section: Introductionmentioning

confidence: 99%

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

Macucci

Marconcini

2020

Journal of Sensors

View full text Add to dashboard Cite

Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.

show abstract

“…Other models to describe various features of noise in 2D material-based field effect devices have also been suggested and highlight that the effect of charge inhomogeneity may last upto different Fermi energy values in different materials and is dependent on their bandstructure [95,96].…”

Section: The Generation-recombination Noise and Deviation From 1/f Spmentioning

confidence: 99%

“…This has been attributed to the difference in their band structures and the stronger screening properties of bilayer graphene [48,49]. The exact microscopic mechanism for noise is a matter of debate and has been attributed to a combination of the number fluctuation and the mobility fluctuation model [53], or an interplay between the bandstructure and inhomogeneity [96]. While the resistance in graphene always decreases with increasing number density, noise does not always decrease monotonically with increasing carrier concentration [53] contrary to what is expected for conventional metals or semiconductors [38].…”

Section: Graphenementioning

confidence: 99%

1 / f noise in van der Waals materials and hybrids

Karnatak

Paul

Islam

et al. 2017

Advances in Physics: X

View full text Add to dashboard Cite

The weak interlayer coupling in van der Waals solids allows isolation of individual atomic or molecular layers with remarkable electrical, optical, and structural properties. The applicability of these two dimensional materials in future electronic architectures requires a thorough understanding of the electrical transport mechanisms as well as of the factors limiting the device performance. The study of slow time-varying fluctuations in resistance, often called the 1/f noise, offers deep insight into the electronic transport and scattering mechanisms, and also acts as a performance benchmark. Here we review the current status on the magnitude and microscopic understanding of low-frequency 1/f noise in two-dimensional electronic materials, with specific focus on graphene, bismuth chalcogenides, and transition metal dichalcogenides. The noise characteristics differ significantly among these systems, and are directly influenced by the band structure, energy dispersion, and screening properties. The noise in field effect devices from van der Waals materials closely compares with or is even lower than that of conduction channels in conventional electronics. The excellent noise performance, when combined with high carrier mobility, energy efficiency and structural flexibility, renders an excellent platform for future electronic, optoelectronic, and sensor applications. ARTICLE HISTORY

show abstract

Carrier density dependence of 1/fnoise in graphene explained as a result of the interplay between band-structure and inhomogeneities

Cited by 12 publications

References 21 publications

Current crowding mediated large contact noise in graphene field-effect transistors

Current crowding mediated large contact noise in graphene field-effect transistors

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

1 / f noise in van der Waals materials and hybrids

Contact Info

Product

Resources

About