2007
DOI: 10.1103/physrevb.75.153201
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Carrier density dependence of mobility in organic solids: A Monte Carlo simulation

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Cited by 108 publications
(81 citation statements)
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“…Assuming incoherent hopping of charge carriers between localized states and using advanced three-dimensional (3D) mechanistic modeling techniques, it is now possible to predict the macroscopic charge transport properties of organic semiconductors using microscopic information at the molecular level, including a Gaussian distribution of site energies, the spatial packing of the material, the distribution of charge transfer integrals, and the reorganization energies [5][6][7][8][9][10][11][12]. Device modeling has been carried out using drift-diffusion [13][14][15][16][17][18], master-equation (ME) [19][20][21][22][23], and kinetic Monte Carlo (KMC) [2,[24][25][26][27][28] simulation methods. Within driftdiffusion and ME device simulations, the Coulomb interaction between the charge carriers is treated using a mean-field approach: using the Poisson equation, the (time-averaged) charge density is used to calculate the (time-averaged) electric field due to the space charge in the device.…”
Section: Introductionmentioning
confidence: 99%
“…Assuming incoherent hopping of charge carriers between localized states and using advanced three-dimensional (3D) mechanistic modeling techniques, it is now possible to predict the macroscopic charge transport properties of organic semiconductors using microscopic information at the molecular level, including a Gaussian distribution of site energies, the spatial packing of the material, the distribution of charge transfer integrals, and the reorganization energies [5][6][7][8][9][10][11][12]. Device modeling has been carried out using drift-diffusion [13][14][15][16][17][18], master-equation (ME) [19][20][21][22][23], and kinetic Monte Carlo (KMC) [2,[24][25][26][27][28] simulation methods. Within driftdiffusion and ME device simulations, the Coulomb interaction between the charge carriers is treated using a mean-field approach: using the Poisson equation, the (time-averaged) charge density is used to calculate the (time-averaged) electric field due to the space charge in the device.…”
Section: Introductionmentioning
confidence: 99%
“…For the GDM, expressions for the mobility function have been obtained from semianalytical, [8][9][10][11][12] three-dimensional master equation ͑3D-ME͒, 13 and Monte Carlo calculations. 7,14 In a limited field range, the field dependence of the mobility is then well described by the Poole-Frenkel ͑PF͒ type expression ͑F͒ ϰ exp͑␥ ͱ F͒, 15,16 which is used more conventionally in analyzes of transport in OLEDs.…”
Section: Introductionmentioning
confidence: 99%
“…The (1 − P i ) excludes, in a mean-field approximation, 27 the possibility of double occupancy. We ignored the Coulomb interaction between carriers in different sites since it was shown by Zhou et al 28 that for low-carrier densities, such as the ones considered in this work, this effect is negligible.…”
Section: Modelmentioning
confidence: 99%