Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J.

doi:10.1109/3.753669

Cited by 32 publications

(20 citation statements)

References 42 publications

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“…The detected signal, corresponding to dynamics of the forward bias, is normalized to the dc bias (dV=V 0 , V 0 ¼ 0.8 V). Not too far above threshold and for the typically small dV, one can approximate the laser's junction capacity to be constant [17]; therefore, ðdV=V 0 Þ ∝ ðdN=N 0 Þ≔Ñ [15]. All data are recorded simultaneously using a 40 GSamples=s digital realtime oscilloscope with 16 GHz analog bandwidth.…”

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confidence: 99%

Experimental Phase-Space Tomography of Semiconductor Laser Dynamics

et al. 2015

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We perform phase-space tomography of semiconductor laser dynamics by simultaneous experimental determination of optical intensity, frequency, and population inversion with high temporal resolution. We apply this technique to a laser with delayed feedback, serving as prominent example for high-dimensional chaotic dynamics and as model system for fundamental investigations of complex systems. Our approach allows us to explore so far unidentified trajectories in phase space and identify the underlying physical mechanism. DOI: 10.1103/PhysRevLett.115.053901 PACS numbers: 42.55.Px, 05.45.Jn, 42.60.Mi, 42.65.Sf Shortly after the initial demonstration of semiconductor lasers in the 1960s, it was discovered that these devices are extremely sensitive to time-delayed back reflections of their own emission [1]: in a range from very weak (40 dB attenuated) to strong delayed feedback, one can observe dramatic modifications of their dynamical behavior [2]. While initially the resulting dynamics was mainly considered to be a major nuisance, soon, fundamental aspects of the observed behavior received increasing interest [3]. Delayed-feedback semiconductor lasers became a prime test bed for the scientific study of nonlinear and highdimensional systems exhibiting chaotic behavior. The dramatic modification to the laser's properties manifests itself in the collapse of the laser's coherence, with an increase of the optical emission linewidth from ∼MHz to easily tens of GHz [4]. This reduction of coherence by up to 5 orders of magnitude is accompanied by corresponding picosecond intensity pulsations [5]. As such, the impact of delayed feedback has to be considered as nontrivial.The state of a free running, single mode semiconductor laser diode biased above threshold is characterized by its carrier inversion (N 0 ), frequency (ν 0 ), and intensity (I 0 ). This solitary laser mode (SLM) usually is a stable fixed point. Delayed feedback strongly modifies the laser's phase-space structure, resulting in a large variety of delay-induced complex phenomena, including narrow linewidth emission or dynamics in the form of limit cycles, quasiperiodic behavior, and deterministic chaos [6,7]. Each of these regimes is characterized by its corresponding phase-space trajectory [8]. Full-bandwidth and realtime measurements of feedback laser intensity [IðtÞ] [5] and frequency [νðtÞ] [9] dynamics already revealed significant new insight; however, this lacked the additional information on the carrier dynamics. Though highly successful, reconstructing complete phase space trajectories from scalar or few-variable via Takens' approach does not allow for the association of different phase-space directions to variables of the physical system [10]. Therefore, it is difficult to identify physical mechanisms from such a reconstructed phase space.Here, we report on the simultaneous experimental determination of the three aforementioned physical phase-space variables with high temporal resolution. Our phase-space tomography therefore allows us to experiment...

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confidence: 99%

Experimental Phase-Space Tomography of Semiconductor Laser Dynamics

et al. 2015

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“…However, the time constant extracted from the measured response (τ meas ' ) using (5) also contains the time constant due space-charge capacitance (C SC ) which can be significant at low bias currents 16,17 . Therefore, we have to subtract off the effect of space-charge capacitance from the measured time constant (τ meas ' ) to determine the actual differential carrier lifetime (τ ' ).…”

Section: Fig 2 Measured Optical Response Curves (Circles) Along Witmentioning

confidence: 99%

Carrier lifetime and recombination in 1.3 μm P-doped InAs qauntum dot lasers

2006

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In this paper we report on carrier lifetime measurements performed on 1.3 µm p-doped InAs quantum-dot lasers. The carrier lifetimes were determined by fitting the measured sub-threshold optical modulation response to a single pole response function, and then correcting this time constant for the diode junction capacitance to obtain the carrier lifetime. The sub-threshold frequency response curves did indeed show a single pole behavior at all the bias currents and, as expected, the extracted carrier lifetimes monotonically decrease with increasing bias currents. The differential carrier lifetime versus bias current data was then fitted, using a simple single carrier level rate equation analysis, to determine the recombination coefficients. Using this simplified analysis, the values of the recombination coefficients are found to be: A = 1.0 x 10 7 /s, B = 2.5 x 10 -11 cm 3 /s, and C = 1.1 x 10 -29 cm 6 /s at room temperature. Since, the carriers are distributed among the dots in a complicated manner that depends on bias, the lifetimes and recombination coefficients extracted using the single carrier level analysis are the effective or average values. Thus we have also built a multi-level rate equation model including the capture and escape times between various QD and wetting layer states. The multi-level rate equation model yields intrinsic recombination coefficients of A QD = 5.5 x 10 7 /s, B QD = 6.5 x 10 -11 cm 3 /s, C QD = 5.6 x 10 -29 cm 6 /s. Regardless of the model used the dominant contribution to the threshold current is found to be Auger recombination which accounts for approximately 80 % of the threshold current in our 1.3 µm p-doped QD lasers.

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“…To verify the measured lifetime data of small signal technique, the lifetime measurements were done using the impedance technique up to 2 GHz in contrast to 1 GHz. Although the high frequency zeros and poles were absent those have found to create problem to the multi-level semiconductor laser systems [7].…”

Section: Active Circuitmentioning

confidence: 99%

“…To properly fit this model and effectively extract the lifetime it is important to take measurements at much higher frequencies > 2 GHz. However, at these high frequencies there could be the observation of additional poles and zeros due to carrier capture and escape times in case of multi-level laser systems and can limit the extraction of differential carrier lifetime [7].…”

Section: Introductionmentioning

confidence: 99%

High bandwidth constant current modulation circuit for carrier lifetime measurements in semiconductor lasers

Singh

Pikal

2012

SPIE Proceedings

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In this paper we present a novel implementation of high bandwidth constant modulation current circuit to the traditional small signal optical response technique used to determine the differential carrier lifetime of a semiconductor laser. This circuit is designed for the voltage to current conversion and to deliver a constant modulation current to the laser diode. The circuit rectifies parasitic effects of high value surface mount resistor at high frequencies used in the impedance independent optical technique and also has lower crosstalk. The application of this circuit can be generalized where the requirement arises for a high bandwidth constant modulation current circuit.

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Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

Cited by 32 publications

References 42 publications

Experimental Phase-Space Tomography of Semiconductor Laser Dynamics

Experimental Phase-Space Tomography of Semiconductor Laser Dynamics

Carrier lifetime and recombination in 1.3 μm P-doped InAs qauntum dot lasers

High bandwidth constant current modulation circuit for carrier lifetime measurements in semiconductor lasers

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