Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

Wang, Hsiang‐Chen; Feng, Shih‐Wei; Malinauskas, T.; Jarašiūnas, K.; Ting, Chu-Chi; Liu, Sean; Tsai, Chung‐Ying

doi:10.1016/j.tsf.2010.04.093

Cited by 6 publications

(14 citation statements)

References 15 publications

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“…According to , ADCs of carriers in InGaN QWs depend on the alloy composition, materials quality, and non‐equilibrium carrier concentration, generally ranging from 0.2 to 3.0 cm 2 /s. In this study, we used its representative value of 2.0 cm 2 /s corresponding to a relative high carrier concentrations .…”

Section: Resultsmentioning

confidence: 99%

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

Bulashevich¹,

Karpov²

2016

Physica Rapid Research Ltrs

121

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The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

Bulashevich¹,

Karpov²

2016

Physica Rapid Research Ltrs

121

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“…In SI27 (Figure 4a), the temperature-dependent PL peak energy exhibited no S-shape behavior. The S-shape behavior has been attributed to the carrier dynamics associated with carrier localization in potential minimums [23][24][25]38,39]. As shown in Figure 4b, two PL spectral peaks were identified below 150 K. The low-energy peak corresponded to localized states.…”

Section: Band Gap Of Inganmentioning

confidence: 94%

“…Temperature-dependent PL measurement was carried out through exciting 325 nm light using 50 mW He-Cd laser. Carrier flow dynamics in InGaN/GaN samples were studied using picosecond FWM [23][24][25][26][27]. The set-up shown in Figure 2 was used to perform a TR-FWM experiment.…”

Section: Sample Structures and Experimental Proceduresmentioning

confidence: 99%

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

Nguyêñ

Feng

et al. 2019

Applied Sciences

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InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer.

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“…Research efforts related to growing GaN on non-polarized sapphire substrates have gained considerable attention in recent years, especially because of the results reported by S. Nakamura and his team [9][10][11]. Other than growth on non-polar a-, m-, and r-planes of three sapphire substrate lattice planes, growth on semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have recently been developed. Semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes of sapphire substrates have the advantage of less lattice structure mismatches with GaN thin films as well as more moderate quantum well barriers.…”

Section: Introductionmentioning

confidence: 99%

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

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We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO 2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO 2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO 2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

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Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

Cited by 6 publications

References 15 publications

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

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