Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Sin, Yongkun; LaLumondiere, Stephen; Lotshaw, William T.; Moss, S. C.

doi:10.1557/opl.2014.103

MRS Proc.

2014

DOI: 10.1557/opl.2014.103

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Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Yongkun Sin

Stephen LaLumondiere

William T. Lotshaw

et al.

Abstract: We investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed ncontacts using time-resolved PL (TR-PL) techniques.

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Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

Abstract: We investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed ncontacts using time-resolved PL (TR-PL) techniques.

Cited by 1 publication

References 5 publications

Degradation mechanisms in high-power multi-mode InGaAs-AlGaAs strained quantum well lasers for high-reliability applications

Degradation mechanisms in high-power multi-mode InGaAs-AlGaAs strained quantum well lasers for high-reliability applications

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