1994
DOI: 10.1063/1.112999
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Carrier-induced strain effect in Si and GaAs nanocrystals

Abstract: New experimental results on Raman scattering from porous silicon and silicon and gallium arsenide nanocrystals are reported. In all of these systems, almost all vibrational modes become Raman active and are remarkably soft. A carrier-induced strain model is proposed to explain the optical properties of these nanocrystal systems. According to this carrier-induced strain model, the selection rule of crystal momentum conservation for Raman scattering is greatly relaxed in Si and GaAs nanocrystals due to the dilat… Show more

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Cited by 40 publications
(23 citation statements)
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“…This may indicate the presence of nanocrystalline material within the hardness indents instead of the original single crystalline wafer material. 31,34 A further sign of ductile behaviour was observed in scratch experiments on GaAs at liquid nitrogen temperatures (Fig. 5), when plastic deformation by dislocation gliding was suppressed.…”
Section: Gallium Arsenide and Indium Antimonidementioning
confidence: 74%
“…This may indicate the presence of nanocrystalline material within the hardness indents instead of the original single crystalline wafer material. 31,34 A further sign of ductile behaviour was observed in scratch experiments on GaAs at liquid nitrogen temperatures (Fig. 5), when plastic deformation by dislocation gliding was suppressed.…”
Section: Gallium Arsenide and Indium Antimonidementioning
confidence: 74%
“…[13]). As for the generation of the intermediate peak (peak II), there might be different possible origins: (i) a downshift of the wavenumber for the Si phonon could be due to the existence of nanocrystals [14] because of the phonon confinement effect, although it is questionable to generate nanocrystalline silicon in the single-crystalline substrate without external treatment like machining, loading etc; (ii) another possibility is that of disorder-induced change of the line shape. This disorder would be originated from the stress induced by the large lattice mismatch and localized at the interface between the SiC epilayer and the Si substrate, which was in good agreement with the experimental results that it appeared only at Points 5 and 6 (cf.…”
Section: Resultsmentioning
confidence: 99%
“…4 are visible in only three experiments. Possible origins of these bands, taking into account the shift due to the compressive stress, could be assigned to either the formation of Si nanocrystals, 22,23 Si-IV (hexagonal diamond structure) phases, [10][11][12][13]24 or regions with extensive cracking. 4.…”
Section: Discussionmentioning
confidence: 99%