In situ compression tests on micron-sized silicon pillars by Raman microscopy—Stress measurements and deformation analysis

Wasmer, Kilian; Wermelinger, Thomas; Bidiville, A.; Spolenak, Ralph; Michler, Johann

doi:10.1557/jmr.2008.0363

Cited by 20 publications

(12 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…€ Ostlund et al later used the same in-situ indentation system together with a commercially available ex-situ instrumented indenter to study the brittle-to-ductile transition (BDT) in SCS pillars at room temperature; 163 in this study, the pillars were fabricated using a FIB technique and ranged in diameter from 940 nm to 230 nm. Wasmer et al also conducted compression tests on SCS pillars using the custom-built indentation module, 164 but this time under a CRM. The stress results from the CRM measurements were compared to the stress results from the indentation module load cell.…”

Section: B Tensile Test Methodsmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

104

View full text Add to dashboard Cite

Silicon devices are ubiquitous in many micro- and nano-scale technological applications, most notably microelectronics and microelectromechanical systems (MEMS). Despite their widespread usage, however, issues related to uncertain mechanical reliability remain a major factor inhibiting the further advancement of device commercialization. In particular, reliability issues related to the fracture of MEMS components have become increasingly important given continued reductions in critical feature sizes coupled with recent escalations in both MEMS device actuation forces and harsh usage conditions. In this review, the fracture strength of micro- and nano-scale silicon components in the context of MEMS is considered. An overview of the crystal structure and elastic and fracture properties of both single-crystal silicon (SCS) and polycrystalline silicon (polysilicon) is presented. Experimental methods for the deposition of SCS and polysilicon films, fabrication of fracture-strength test components, and analysis of strength data are also summarized. SCS and polysilicon fracture strength results as a function of processing conditions, component size and geometry, and test temperature, environment, and loading rate are then surveyed and analyzed to form overarching processing-structure-property-performance relationships. Future studies are suggested to advance our current view of these relationships and their impacts on the manufacturing yield, device performance, and operational reliability of micro- and nano-scale silicon devices.

show abstract

Section: B Tensile Test Methodsmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

104

View full text Add to dashboard Cite

show abstract

“…Firstly, the absence of important strain gradients that are usually responsible for substantial extrinsic contributions and can mask the effect of the sole volume and free surfaces [3,8]. Secondly, the relative simplicity of sample preparation and testing is another merit of micro-compression, which can be performed either ex-situ or insitu under SEM or TEM observation [9], as well as coupled with other electrical and acoustical [10], spectroscopic [11] and diffraction [12] techniques.…”

Section: Introductionmentioning

confidence: 99%

Size and plasticity effects in zirconia micropillars compression

Camposilvan

Anglada

2016

Acta Materialia

View full text Add to dashboard Cite

The micropillar compression technique has shown the potential for activating the brittle-to-ductile transition in ceramic monocrystals when testing reduced volumes. In this work, the role of size is studied by comparing the mechanical response of polycrystalline tetragonal zirconia micropillars and macroscopic specimens under compression. In micropillars, the absence of the natural defect population typical of bulk zirconia increases considerably the strength, allowing the activation of plastic deformation mechanisms and their study, showing in this way that the brittle-to-ductile transition is not limited to ceramic monocrystals only. The main mechanism of plastic deformation is transformation-induced plasticity, which is shown to be size dependent. The deformation behavior is studied in detail by loading-unloading tests at constant and increasing peak stresses, while the microstructure evolution is revealed by FIB cross-sections, TEM and STEM observations performed on lamellas extracted from pillars retrieved before failure. Finally, a failure mechanism is proposed, based on the damage induced by phase transformation.

show abstract

“…Combining micro-compression tests on silicon pillars with Raman microscopy allowed the detection of cracks prior to failure. [7] Compression tests of silicon nanoparticles in transmission electron microscopy (TEM) enabled to observe elastic and plastic deformation in situ. [8] Indentation is a very accurate method to obtain several characteristic material properties such as Young's modulus and hardness.…”

Section: Introductionmentioning

confidence: 99%

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Wermelinger

Spolenak

2009

J Raman Spectroscopy

View full text Add to dashboard Cite

Silicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross-sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga + ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range.

show abstract

In situ compression tests on micron-sized silicon pillars by Raman microscopy—Stress measurements and deformation analysis

Cited by 20 publications

References 25 publications

Fracture strength of micro- and nano-scale silicon components

Fracture strength of micro- and nano-scale silicon components

Size and plasticity effects in zirconia micropillars compression

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Contact Info

Product

Resources

About