Carrier leakage and temperature dependence of InGaAsP lasers

Abstract

A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.

The influence of temperature on the recombination processes in blue and green InGaN LEDs

“…It is unlikely that defect-related recombination causes this efficiency droop temperature dependence as such recombination is expected to reduce with decreasing temperature due to a "freeze out" of defect sites [7]. Auger recombination and conventional carrier leakage (thermal carrier escape) have also been shown to reduce with reducing temperature [2,8] and are therefore not expected to result in the observations of Fig. 1.…”

“…The efficiency of such devices is observed to peak at low currents where the light output is relatively low and show a reduction with increasing injection current in an effect known as efficiency droop. There is little agreement on the cause of efficiency droop with defect-related recombination [1], carrier leakage [2,3] and Auger recombination [4,5] all separately being proposed as loss mechanisms which limit the high current performance of InGaN LEDs. Whilst the reduction of carrier leakage due to the inclusion of electron blocking layers (EBLs) has been shown to improve the performance of LEDs [6], studies by different groups observe an enhancement of the efficiency droop effect in devices which include EBLs [3].…”

The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 ?m InGaAsP Quantum Well Semiconductor Diode Lasers

“…However, the threshold current I th of such devices is highly temperature sensitive. This has been ascribed by various authors to a wide range of effects including Auger recombination [1], differential gain [2], net optical gain [3] and carrier leakage [4]. We have applied hydrostatic pressure to 1.3 mm lasers and measured the variation of I th to identify the major current path at room temperature.…”

Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

“…One of the key features that have made (Ga,In)(N,As) so attractive as an active material for quantum well (QW) laser diodes (LDs) is its higher conduction band offset compared with the InP family materials [3]. This should enhance electron confinement in the QW and thus improve the temperature performance of (Ga,In)(N,As)/GaAs QW LDs compared with that of the InP family [1,3,4]. Devices using this quaternary alloy would not need any extra thermoelectric cooling in order to operate, thus making packaging simpler, cheaper and more compact.…”