Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

“…Since different forward current densities imply different injection levels, the observed trend indicates that the effective carrier lifetimes decrease with increasing injection level. It was reported that effective carrier lifetimes of 6H-SiC PiN diodes decrease with injection levels at very high current densities (>100 A/cm 2 ) due to the effect of bulk Auger recombination [86]. However, Auger recombination is not believed to be responsible for the decrease in the carrier lifetime here due to the relatively low current densities in this study.…”

“…However, the validity of this analysis is still in debate and further studies are needed [87]. Ramungul, et al, studied the ramp recovery of SiC pin diodes under high-level injection [86]. They found a reduction of effective carrier lifetime with injection level, which is believed due to the dominance of Auger recombination process at high current injection level (>100 A/cm 2 ).…”

“…[71,86]. The author in reference [71] believed that this is due to perimeter surface recombination effect, and a technique is proposed to further separate the surface effect from the bulk.…”

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

“…The ambipolar Auger coefficient is the sum of Auger coefficients for both electrons, , and holes, . The coefficients of typical indirect semiconductors are listed in Table II, [47]- [49]. An ambipolar Auger coefficient of 3.0 cm /s was determined by transient measurements of the step recovery in 6H-SiC pin diodes at room temperature.…”

Characterization of phosphorus implantation in 4H-SiC

“…There has been significant activity in developing SiC devices in the last few years and numerous devices have been successfully demonstrated which include high-voltage power metal oxide semiconductor field effect transistors (UMOSFETs) and thyristors, 1,2 high-voltage UMOS insulated gate bipolar transistors (IGBTs), 3 microwave metal semiconductor field effect transistors (MESFETs), 4 power static induction transistors (SITs). Properties such as high avalanche electric breakdown field (~3 × 10 6 V/cm), large bandgap (~3 eV), high thermal conductivity (~4.5 W/cm.K) and radiation resistance make it a material of choice for highvoltage applications.…”