Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

Sęk, G.; Janiak, F.; Motyka, M.; Ryczko, K.; Misiewicz, J.; Bauer, Adam Q.; Höfling, Sven; Forchel, A.

doi:10.1016/j.optmat.2011.06.019

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…One can point out at least two possible reasons leading to such an observation: (i) carrier escape from the QW to some population of e.g. optically inactive states spatially located at the InAs/Ga 0.80 In 0.20 As 0.15 Sb 0.85 heterointerface [10][11][12], or (ii) it can be attributed, as recently postulated [13], to the hole tunnelling out of its confining potential towards the GaAs 0.08 Sb 0.92 matrix. The first scenario cannot be totally excluded because the existence of non-radiative centres at the QW interfaces has already been confirmed in several experiments [10,12].…”

Section: Resultsmentioning

confidence: 84%

Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

et al. 2016

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Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/ Ga0.80In0.20As0.15Sb0.85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 µm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3 ± 0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.

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Section: Resultsmentioning

confidence: 84%

Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

et al. 2016

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“…One of the concepts of how to improve the performance and expand the possible ICL emission range is to replace the ternary GaInSb valence band well material in the InAs/GaInSb/InAs sequence by a quaternary layer of GaInAsSb [11]. Intrinsic limitations of the ICLs with GaInSb hole-confining layers are related to carrier losses [12] or the strain of GaInSb with respect to the substrate [13]. Replacing the ternary GaInSb material of the valence band well with the quaternary GaInAsSb layer may help to reduce this strain, as well as allow increasing of the indium content in this layer.…”

Section: Introductionmentioning

confidence: 99%

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

et al. 2015

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The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1 − x /InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

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Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid-and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

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Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

Cited by 6 publications

References 15 publications

Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

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