Carrier mobilities of (001) cadmium arsenide films

Goyal, Manik; Salmani-Rezaie, Salva; Pardue, Tyler N.; Guo, Binghao; Kealhofer, David; Stemmer, Susanne

doi:10.1063/5.0002771

Cited by 23 publications

(14 citation statements)

References 40 publications

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“…Capped (001)-oriented Cd 3 As 2 films were grown by molecular beam epitaxy and fabricated into gated Hall bar devices. Details regarding the growth and structural and electronic characterization of the resulting structures have been reported elsewhere [12,[14][15][16]. The samples consist of a (100) GaSb substrate, cut 3º toward (111)B, onto which was grown a buffer layer of In x Al 1−x Sb, a Cd 3 As 2 layer, and finally a thin GaSb cap.…”

Section: Experimental Methodsmentioning

confidence: 99%

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

et al. 2021

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The three-dimensional Dirac semimetal is a parent phase for a variety of topological phases that can be generated by tuning parameters in material growth or device operation. Notably, it has recently been found that cadmium arsenide, which is ordinarily a three-dimensional Dirac semimetal, can nevertheless realize a three-dimensional topological insulator in ( 001)-oriented films about 50-nm thick. In this work, we study the quantum Hall effect in thin ( 001)-oriented cadmium arsenide films, their thickness ranging from 12 to 24 nm. When the carrier density is kept approximately constant across the different films, quantum transport reveals an identical underlying picture. The result is shown to be consistent with the transport's origin in the surface states of a three-dimensional topological insulator, but problematic for a perspective in which the quantum Hall effect originates from the confined subbands of the bulk band structure. These thin-film results complement previous studies of the quantum Hall effect in 50-nm-thick films.

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Section: Experimental Methodsmentioning

confidence: 99%

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

et al. 2021

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“…The well-defined conical features for both valence and conduction bands indicate the obtained Cd 3 As 2 film is a gapless Dirac semimetal . The fact that the gapless bulk state dominates in this system is incoherent with the conclusion that the thicker films over 50 nm show mostly bulk state transport . The Fermi velocity of the 3D Dirac fermions in Cd 3 As 2 is about 1.5 times higher than in graphene, which provides clues for the high mobility observed in transport experiments …”

Section: Resultsmentioning

confidence: 63%

“…The thickness dependence of bulk carrier transport in Cd 3 As 2 films provides novel feasibility for us to distinguish the effect of gap opening on the Dirac fermionic behavior under low-energy photoexcitation . After photoexcitation, electrons and holes establish separated Fermi distributions with electrons in the conduction band and holes in the valence band in a conventional semiconductor .…”

Section: Device Implementation For Terahertz Photodetectionmentioning

confidence: 99%

Thickness-Controlled Three-Dimensional Dirac Semimetal for Scalable High-Performance Terahertz Optoelectronics

Yao

Zhang

Sun³

et al. 2021

ACS Photonics

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The advent of topological semimetals with peculiar band structure and exotic transport provides an unprecedented material platform that allows exploring novel optoelectronics for circumventing technological bottlenecks. Cd3As2, a three-dimensional Dirac semimetal, represents a hallmark system for studying nontrivial quantum phenomena led by Dirac/Weyl physics. However, controllable growth and device implementation are still in their infancy due to lack of efficient ways to make use of light-induced effects in semimetals. In this study, highly sensitive, low-energy photodetection up to terahertz (THz) band wavelength along with fast response at room temperature has been implemented in an antenna-assisted Cd3As2 planar structure, which is derived from molecular-beam epitaxial growth. It is demonstrated that the THz photodetector based on semimetal Cd3As2 films possesses a responsivity of 0.04 A/W and a NEP value of 430 pW/Hz1/2. Nonequilibrium manipulation of Dirac fermions with thickness-controlled gap phases and an electromagnetic-coupling effect has been well exploited. Our results portray opportunities for developing high-performance, scalable low-energy photodetectors enabled by a Dirac semimetal, which is promising for broadband photoresponses in the highly pursued THz band.

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“…[ 38 ] Finally, improving the Zn x Cd 1‐x Te buffer to utilize a metamorphic graded layer structure could help to control threading dislocation densities in the Cd 3 As 2 and CdTe epilayers and reduce recombination at defects. [ 39,40 ] However, this proof‐of‐concept demonstration shows that a range of high‐performance devices are now possible with the ability to epitaxially grow thin semiconductors on Cd 3 As 2 .…”

Section: Discussionmentioning

confidence: 99%

Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

Rice

Lee

Fluegel

et al. 2022

Adv Funct Materials

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Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostructures is demonstrated by epitaxially incorporating the Dirac semimetal Cd 3 As 2 between Zn x Cd 1-x Te and CdTe layers via molecular beam epitaxy on GaAs (001) substrates. The approach utilizes the higher energy (001) surface of Cd 3 As 2 to stabilize 2D epitaxy of zinc blende semiconductors. To demonstrate the impact heterostructure formation offers to device performance, an all-epitaxial, barrier-type vertical photodetector is fabricated that accesses a different carrier separation mechanism than previously reported non-epitaxial junctions and consequently exhibits significantly reduced dark currents. The results highlight the important role that epitaxial integration can play in accessing advanced architectures for topological semimetal-based devices.

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Carrier mobilities of (001) cadmium arsenide films

Cited by 23 publications

References 40 publications

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

Thickness-independent transport in thin (001)-oriented cadmium arsenide films

Thickness-Controlled Three-Dimensional Dirac Semimetal for Scalable High-Performance Terahertz Optoelectronics

Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

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