Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films

Abstract

The anomalously large gate leakage current observed prior to dielectric breakdown in electrically stressed n+ gate p metal–oxide–semiconductor field-effect transistors is investigated. Carrier separation measurements reveal that the leakage currents are electron tunneling current, and in some cases are accompanied by noticeable hole-related current at low gate voltages. Experimental results demonstrate the close correlation between this phenomenon and soft breakdown in terms of current–voltage characteristics.

Tunneling properties versus electronic structures in Si/SiO2/Si junctions from first principles

“…[1][2][3][4][5]7,8 Regarding the current blocking role of SiO 2 layers, tunneling currents have been measured by scanning tunneling microscopy of Si/SiO 2 structures 11,12 and by direct current-voltage measurements of Si/SiO 2 /Si devices. [13][14][15] Theoretical studies have been performed on atomic structures, electronic properties, and tunneling properties of Si/SiO 2 interfaces and Si/SiO 2 /Si structures. Atomic structures of Si/SiO 2 interfaces in Si/SiO 2 /Si structures have been modeled by using crystalline SiO 2 structures, [16][17][18][19][20] firstprinciples molecular dynamics, 21,22 and the Monte Carlo approach.…”