Carrier transport across grain boundaries in polycrystalline silicon thin film transistors

Chen, Yong; Zhang, Shuang; Li, Zhang; Huang, Hanhua; Wang, Wenfeng; Zhou, Chao; Cao, Wanqiang; Zhou, Yuming

doi:10.1007/s11595-016-1335-6

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…Chen Yong et al developed a grain boundary model and studied the effect of grain boundaries in polycrystalline silicon thin film transistors. 15 In the present work, a model is developed to investigate the transport properties of polycrystalline SnO TFT based on the density of trap states present in the mid gap. The changes in the energy band alignment using the sub gap states model during the phase transformation of SnO material along with its electrical characteristics are analyzed.…”

Section: Introductionmentioning

confidence: 99%

“…However, further analysis is required to elucidate the device physics and understand the phase transformation of SnO material in order to improve the performance of the device. Chen Yong et al developed a grain boundary model and studied the effect of grain boundaries in polycrystalline silicon thin film transistors 15 . In the present work, a model is developed to investigate the transport properties of polycrystalline SnO TFT based on the density of trap states present in the mid gap.…”

Section: Introductionmentioning

confidence: 99%

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Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Vallisree¹,

Lenka

Goyal

et al. 2021

Int J Numerical Modelling

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In this work, we report on four tin monoxide (SnO) thin-film transistor (TFT) grain boundary (GB) models of carrier transport considering the native defects in the thin film, interface traps, and GB deep/tail states. The changes in the activation energy and the GB barrier potential on the application of gate electric field are thoroughly investigated. The shift in Fermi level and the charge carrier transport mechanisms are examined for the two-channel model by the application of external potential. Four models are developed to study the impact of phase transformation of SnO material on the TFT characteristics.Among the four developed models which are considered as four different cases, Case (iv) shows excellent performance and the simulation results revealed that the location of Fermi level closer to the mid gap are suggested to favor the ambipolar behavior. Also, the influence of SnO material thickness and the effect of different dielectrics on the ambipolar device characteristics are examined aiming at optimized performance of the device. The developed optimized model will help the process engineers in tuning the SnO material parameters for achieving better performance in both p-type and n-type TFTs when employed in CMOS based displays.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Vallisree¹,

Lenka

Goyal

et al. 2021

Int J Numerical Modelling

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show abstract

“…As the use of lead and other toxic elements has been restricted, the interest in substituting leadcontaining materials for lead-free materials has surged recently in order to meet environmental standards such as Restriction of Hazardous Substances (RoHS) and Waste Electrical and Electronic Equipment Directive (WEEE). [5][6][7][8] Compared with BaTiO 3 , PZT and other materials in the perovskite system, NBT has excellent dielectric and piezoelectric properties with higher relative permittivity (ε r ) and lower dielectric loss. NBT exhibits the maximum relative permittivity ε r ∼ 3000 at ∼ 320 (T max ) and possesses a distorted perovskite structure with extensive chemical, cation-displacement, and octahedral tilt disorder.…”

Section: Introductionmentioning

confidence: 99%

Study on the dielectric properties of Mg-doped NaBiTi${}_{6}{{\rm{O}}}_{14}$ ceramics ^*

et al. 2017

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With the interest in using lead-free materials to replace lead-containing materials increasing, the use of Na 0.5 Bi 0.5 TiO 3 (NBT) has come into our sight. We studied the composition of NBT and found that NaBiTi 6 O 14 ceramics can be compositionally tuned by Mg-doping on the Ti-site to optimize the dielectric properties. In this study, Mg-doped NaBiTi 6 O 14 (NaBi(Ti 0.98 Mg 0.02 ) 6 O 14−δ ) ceramics were prepared by a conventional mixed oxide route at different sintering temperatures, and their dielectric properties have been studied at a wide temperature range. X-ray diffraction (XRD) patterns of the NBT-based ceramics indicate that all samples have a pure phase without any secondary impurity phase. The experimental data show that after Mg-doping, the relative permittivity and dielectric loss become lower at 1040, 1060, and 1080 • C except 1020 • C and at different frequencies from 10 kHz, 100 kHz to 1 MHz. Take 1060 • C for example, when the sintering temperature is 1060 • C at 1 MHz, the minimum relative permittivity of NaBiTi 6 O 14 is 32.9 and the minimum dielectric loss is 0.01417, the relative permittivity of NaBi(Ti 0.98 Mg 0.02 ) 6 O 14−δ under the same condition is 25.8 and the dielectric loss is 0.000104. We explored the mechanism of Mg-doping and surprisingly found that the dielectric property of NaBi(Ti 0.98 Mg 0.02 ) 6 O 14−δ becomes better owing to Mg-doping. Thus, NaBi(Ti 0.98 Mg 0.02 ) 6 O 14−δ can be used in microwave ceramics and applied to new energy materials.

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Dielectric properties of Bi4Ti3O12 ceramics by impedance spectroscopic method

Chen

Xue

et al. 2016

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Carrier transport across grain boundaries in polycrystalline silicon thin film transistors

Cited by 5 publications

References 12 publications

Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Study on the dielectric properties of Mg-doped NaBiTi${}_{6}{{\rm{O}}}_{14}$ ceramics ^*

Dielectric properties of Bi4Ti3O12 ceramics by impedance spectroscopic method

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Carrier transport across grain boundaries in polycrystalline silicon thin film transistors

Cited by 5 publications

References 12 publications

Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays

Study on the dielectric properties of Mg-doped NaBiTi${}_{6}{{\rm{O}}}_{14}$ ceramics *

Dielectric properties of Bi4Ti3O12 ceramics by impedance spectroscopic method

Contact Info

Product

Resources

About

Study on the dielectric properties of Mg-doped NaBiTi${}_{6}{{\rm{O}}}_{14}$ ceramics ^*