Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices

Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles

“…9 Based on the above experimental results and discussion, we propose a mechanism for conductance switching. The electronic transition is due to the field-induced transfer of charge carriers between AlQ 3 and aluminum core.…”

Nonvolatile memory and opto-electrical characteristics of organic memory devices with zinc oxide nanoparticles embedded in the tris(8-hydroxyquinolinato)aluminum light-emitting layer

“…Therefore, with the rapid develop-52 ment of organic memory technology, a lot of effort has been made 53 to improve organic memory device structures and to understand 54 their operating mechanisms. 55 A number of device structures of the nonvolatile organic memory 56 have been manufactured and extensively explored, such as a single-57 layer structure consisting of only one type of organic material [5,6], a 58 tri-layer structure in which nano-traps for charge carriers are sand- 59 wiched between two organic layers [7,8], and a spin-cast blend of 60 polymer and nano-traps in which nano-traps are randomly dis- 61 persed in the polymer layer [9][10][11][12][13][14][15][16]. Because the charges stored 62 inside the nano-traps can efficiently change the conductivity of 63 the organic layer, finding appropriate materials to produce the 64 nano-traps has been the major issue in the tri-layer or hybrid com-65 posite structures of the organic memory.…”

“…Because the charges stored 62 inside the nano-traps can efficiently change the conductivity of 63 the organic layer, finding appropriate materials to produce the 64 nano-traps has been the major issue in the tri-layer or hybrid com-65 posite structures of the organic memory. So far various kinds of 66 nano-traps materials employed in nonvolatile organic memory 67 devices utilizing sandwich or blend structures have been reported, 68 such as metal nanoparticles [8,10,11], semiconductor nanoparticles 69 [12][13][14], grapheme [9], fullerene (C 60 ) nanoparticles [15], or core/ 70 shell CdSe/ZnS nanoparticles [16]. 71 Among the several types of nano-traps materials, Zinc oxide 72 (ZnO) is a promising material as it is an abundant material with 73 non-toxic, cheap, mechanically flexible and optically transparent 74 [17].…”

Advancements in organic nonvolatile memory devices

“…Only devices with metal layers less than 10 nm exhibited switching behavior. Recently, Reddy et al [44] nanoparticles on device performance. They fabricated a trilayer ITO/Alq 3 /Al nanoislands/Alq 3 /Al memory device, with the thickness of each Alq 3 layer about 50 nm and that of the middle Al layer varying between 5 and 20 nm.…”