Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions

Ha, Woo Jin; Chhajed, Sameer; Chavan, Ashonita; Lee, Jae‐Hoon; Kim, Ki-Se; Kim, Jong Kyu

doi:10.1002/pssc.201100487

Cited by 10 publications

(7 citation statements)

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“…25 On the other hand, some other studies reported that the electron affinities of GaN and AlN are 4.2 eV and 2.05 eV, respectively. 23,26 Therefore, the calculated SBH value is dependent on the value of Al x Ga 1−x N electron affinity used in the calculation. figure (denoted by a green diamond).…”

Section: Methodsmentioning

confidence: 99%

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Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

et al. 2016

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The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

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Section: Methodsmentioning

confidence: 99%

“…These results of ideality factor and reverse leakage current lead to the conclusion that the dominant carrier transport mechanism for the Schottky contacts changes sensitively with the change in electrical properties (e.g., reverse leakage current) caused by the structural defects. 26 …”

Section: -5mentioning

confidence: 99%

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

et al. 2016

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“…Hence, the Ni-and Au-free gate metal stack is necessary to realize AlGaN/GaN HEMTs in the Si CMOS process line. So far, many Ni-and Au-free gates, including Ti, 5 Cr, 5 Pt, 6 Pd, 6,7 WSi, 7 Ir, 7,8 TaN, 9 and ITO, 9 have been evaluated for the fabrication of AlGaN/GaN HEMTs and Schottky barrier diodes (SBDs). Compared to other materials, the TiN exhibits many advantages such as large metal work function ($5 eV), 10 high thermal stability, 10 and process compatibility to both dry and wet etching processes.…”

Section: Introductionmentioning

confidence: 99%

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Arulkumaran

et al. 2017

Journal of Applied Physics

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The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and highelectron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (J R ) of TiN SBDs increases exponentially with the increase of reverse voltage (V R ) from 0 to À3.2 V (Reg. I). This conduction behavior is dominated by Poole-Frenkel emission from TiN through an interface state of 0.53 eV to the conductive dislocation-related continuum states. The obtained interface state of 0.53 eV may be due to the plasma damage to the surface of the AlGaN/GaN HEMT structure during the TiN sputtering. When the TiN SBDs are biased with À20 < V R < À3.2 V, J R saturated due to the depletion of the 2-dimensional electron gas (2DEG) channel (Reg. II). This conduction behavior is dominated by the trap-assisted tunneling through the interface state at $0.115 eV above the Fermi level. The three terminal OFF-state gate leakage current of AlGaN/GaN HEMTs exhibited an activation energy of 0.159 eV, which is in close agreement with the obtained interface state of $0.115 eV from saturated J R (Reg. II) of the SBDs. The observation of the negative temperature coefficient (À1.75 V/K) from the OFF-state breakdown voltage (at 1 lA/mm) of AlGaN/GaN HEMTs is due to the trap-assisted tunneling mechanism, which is also well correlated with the conduction mechanism realized from the reverse leakage current of the SBDs.

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“…Hence, the Ni/Au‐free gate is required to realize GaN HEMTs in the Si CMOS process line. Researchers have tried Ni/Au‐free gates include Ti, Cr, Ir, Re, Pd, Pt, ITO, TaN, W, WN x , and TiN for the fabrication of AlGaN/GaN HEMTs . Compare with other materials, TiN has a lot of advantages, such as: (i) large work function (∼5 eV ); (ii) compatibility to various CMOS processes, e.g., dry etching, wet etching, sputtering, etc.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an improved Schottky barrier height (SBH) of ∼1.1 eV, which is larger than the Schottky contacts formed by the other reported TiN‐based stacks and by most of Ni/Au‐free materials. The improvement of SBH is due to the increase of metal work function either by the incorporation of oxygen in sputtered TiN or by using a high N2/Ar ratio during the sputtering process. Although the HEMTs with TiN gate show comparable DC output and transfer characteristics compared to devices with Ni/Au gate, they exhibit enhanced OFF‐state breakdown voltages (BVgd) of ∼48–58 V. This is consistent with the observation of an order of magnitude lower reverse gate leakage current and is also well agreed by the enhanced SBH of the sputtered TiN as compared to the Ni/Au gate. With reference to the HEMTs with Ni/Au gate, a slight increase of dynamic/static on‐resistances (Rds[ON]) ratio (∼8%) was observed in the sputtered TiN gate HEMTs.

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Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions

Cited by 10 publications

References 0 publications

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

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