Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes

“…However, the LEE still remains at a low level, which is a major obstacle to achieving more efficient AlGaN-based DUV-LEDs. [13][14][15][16][17][18] The low LEE originates from the total internal reflection on the AlGaN/substrate and substrate/air interface due to the difference in refractive index, the dominant transverse magnetic (TM) polarization mode in AlGaN quantum wells, and the strong absorption of DUV light by the p-GaN contact layers and Ni/Au electrodes. [19][20][21][22][23] To date, various methods have been developed to improve the LEE.…”