Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Le, L. C.; Zhao, Debiao; Jiang, Desheng; Li, L.; Wu, Lu; Chen, P.; Liu, Z. S.; Li, Z. C.; Fan, Yu-Mei; Zhu, Junbo; Wang, H.; Zhang, S. M.; Yang, Hung‐Chih

doi:10.1063/1.4772548

Cited by 58 publications

(38 citation statements)

References 22 publications

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“…67 and 68, while the A coefficient was assumed to be roughly proportional to N disl 69 (see also the recent studies on the impact of TDD on LED efficiency presented in Refs. 63,[70][71][72][73][74][75][76]. Auger coefficients were not forced to be the same in LDD and HDD LEDs because, although nominally identical, secondary ion mass spectrometry (SIMS) measures suggest that the QWs of the LDD devices have probably a smoother profile, which could imply a lower Auger rate.…”

Section: D Simulation Studymentioning

confidence: 99%

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

et al. 2014

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Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of currentand temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models

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Section: D Simulation Studymentioning

confidence: 99%

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

et al. 2014

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“…17 V-defects act as non radiative recombination centers and leakage pathways, and they severely degrade the open-circuit voltage (V oc ) of InGaN solar cells. 19,20 A 2-step QB growth process must be employed to mitigate the propagation of V-defects through an InGaN/GaN MQW stack. 15,16 A low temperature GaN cap layer protects QW integrity, while the subsequent layer is grown at higher temperature and in H 2 to improve surface adatom mobility and effectively fill in the V-defects.…”

mentioning

confidence: 99%

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

Young

Farrell

et al. 2013

Applied Physics Letters

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InGaN/GaN multiple quantum well concentrator solar cells Appl. Phys. Lett. 97, 073115 (2010); 10.1063/1.3481424 Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells Appl. Phys. Lett. 96, 081103 (2010); 10.1063/1.3327331 Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

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“…3 The QCSE separates electron and hole wavefunctions which reduces the radiative recombination efficiency, and TDs can act as a carrier leakage path to influence the device reliability as well. 4,5 Besides, TDs are the nonradiative recombination centers which trap carriers and reduce the internal quantum efficiency (IQE).…”

Section: Introductionmentioning

confidence: 99%

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Hsu

et al. 2016

AIP Advances

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In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.

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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Cited by 58 publications

References 22 publications

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

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