Cathodoluminescence

Myhajlenko, S.

doi:10.1007/978-1-4615-5361-8_4

Cited by 7 publications

(5 citation statements)

References 122 publications

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“…The residual gases Ar and O 2 in the process of magnetron sputtering can cause radiation-induced chemical etching of materials. Contamination and etching effects are sensitive to temperature [91]. Therefore, the difference in ultraviolet photoluminescence spectra of ZnO films at different substrate temperatures mainly reflects the difference in lattice defect density caused by residual gases such as Ar and O 2 [92].…”

Section: Effect Of Substrate Temperature On Properties Of Zno:ga Filmsmentioning

confidence: 99%

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

2019

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As a wide band-gap and direct transition semiconductor material, ZnO has good scintillation performance and strong radiation resistance, but it also has a serious self-absorption phenomenon that affects its light output. After being doped with Ga, it can be used for the scintillator of ultra-fast scintillating detectors to detect X-ray, gamma, neutron, and charged particles with extremely fast response and high light output. Firstly, the basic properties, defects, and scintillation mechanism of ZnO crystals are introduced. Thereafter, magnetron sputtering, one of the most attractive production methods for producing ZnO:Ga film, is introduced including the principle of magnetron sputtering and its technical parameters’ influence on the performance of ZnO:Ga. Finally, ZnO:Ga film’s application research status is presented as a scintillation material in the field of radiation detection, and it is concluded that some problems need to be urgently solved for its wider application.

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Section: Effect Of Substrate Temperature On Properties Of Zno:ga Filmsmentioning

confidence: 99%

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

2019

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“…In the diffusion interface the mean free path for a compound consisting of Zn, S and O also can be calculated using Eqn. (4). The varying concentration of these three elements will vary the elastic mean free path as a function of depth in the diffusion interface.…”

Section: Electron Step Lengthmentioning

confidence: 99%

“…At low energies (<5 keV) the electrons bombarding the phosphor screen have a much shorter penetration depth than those in CRTs. Because the generated CL is dependent upon the energy loss in the phosphor, 4,6 growth of the ZnO layer significantly influences the CL intensity, with energy lost in the nonluminescent ZnO layer not contributing to the CL. 7 In this paper a Monte Carlo electron trajectory simulation is used to determine an electron interaction volume and an energy loss profile through the ZnO layer and the ZnS bulk, with a diffusion interface between the oxide layer and the bulk.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of low‐energy electron trajectories and energy loss in ZnS phosphor powders

Greeff

Swart

2001

Surface & Interface Analysis

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During electron beam irradiation of ZnS phosphor powders, a non-luminescent ZnO layer is formed on the powder due to electron-beam-stimulated surface reactions. As the thickness of the oxide layer increases, the energy loss in the ZnS bulk decreases with a subsequent degradation in cathodoluminescence. Using the Monte Carlo technique, the trajectories of low-energy electrons were simulated in a ZnS phosphor powder with a ZnO overlayer of varying thickness based on recent models describing the energy loss and scattering angles of low-energy electrons in a solid. A diffusion interface between the ZnO layer and ZnS bulk was simulated by varying the concentration of O and S atoms in the interface. Modelling the interface in this way describes the electron trajectories and energy loss in the interface region, because a sharp interface between two dissimilar layers very seldom exists. In the energy-loss profiles the transition between ZnO and ZnS corresponds to a sharp increase in energy loss due to the increased rate of energy loss of electrons in ZnS. The diffusion interface has a smoothing effect on this sudden increase. From the electron trajectory data and corresponding energy loss, energy loss profiles were determined indicating the cumulative distribution of all the electron energy losses as a function of the interaction volume depth and thickness of the ZnO layer. When a distribution of incident angles is used, the profile differs from the typical energy-loss profile seen at normal incident angles. As the thickness of the ZnO layer increases, the total energy loss in the solid decreases due to the increase in the backscattering coefficient of electrons in ZnO.

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“…As the decay time τ ex of cathodoluminescence is short of the order of tens of nanosecond , the rate constant δ ex = 1/τ ex for the decay of excited luminescence centres will be high. For δ ex >> ξ, and δ ex >> β q, using eqn N ex can be expressed as

N_{ex} = \frac{η_{1} β_{q} ρ b^{'} α V v_{0}}{Δ_{ex} H ((), β_{q} - ξ)} ([], normalexp ((), - ξ t) - normalexp ((), - β_{q} t))

…”

Section: Theorymentioning

confidence: 99%

Is the fracto‐mechanoluminescence of ZnS:Mn phosphor dominated by charged dislocation mechanism or piezoelectrification mechanism?

Chandra

Jha

et al. 2015

Luminescence

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Mathematical approaches made for both the charged dislocation model and piezoelectrically induced electron bombardment model of fracto-mechanoluminescence (FML), the luminescence induced by fracture of solids, in ZnS:Mn phosphor indicate that the piezoelectrically induced electron bombardment model provides a dominating process for the FML of ZnS phosphors. The concentration of 3000 ppm Mn(2+) is optimal for ML intensity of ZnS:Mn phosphor. The decay time of ML gives the relaxation time of the piston used to deform the sample and the time tm of maximum of ML is controlled by both the relaxation time of the piston and decay time of charges on the newly created surfaces of crystals. As the product of the velocity of dislocations and pinning time of dislocations gives the mean free path of a moving dislocation. Both factors play an important role in the ML excitation of impurity doped II-VI semiconductors. The linear increase of total ML intensity IT with the impact velocity indicates that the damage increases linearly with impact velocity of the load. Thus, the ML measurement can be used remotely to monitor the real-time damage in the structures, and therefore, the ML of ZnS:Mn phosphor has also the potential for a structural health monitoring system.

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Cathodoluminescence

Cited by 7 publications

References 122 publications

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

Monte Carlo simulation of low‐energy electron trajectories and energy loss in ZnS phosphor powders

Is the fracto‐mechanoluminescence of ZnS:Mn phosphor dominated by charged dislocation mechanism or piezoelectrification mechanism?

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