Cathodoluminescence and IR absorption of oxygen deficient silica – influence of hydrogen treatment

Trukhin, A.N.; Fitting, H.‐J.; Barfels, T.; Czarnowski, A. von

doi:10.1016/s0022-3093(99)00558-x

Cited by 26 publications

(23 citation statements)

References 14 publications

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“…These bands are a well-shaped blue one at 2.7 eV and a smeared UV one. These shapes of luminescence bands are attributed in the literature to modified ODC(II) the luminescence, apparently related to the presence of chlorine [10,11]. The presence of fluorine gives a similar luminescence band shape [4,12].…”

Section: X-ray Excited Luminescencesupporting

confidence: 60%

Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology

Trukhin

Golant

2007

Journal of Non-Crystalline Solids

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Section: X-ray Excited Luminescencesupporting

confidence: 60%

Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology

Trukhin

Golant

2007

Journal of Non-Crystalline Solids

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“…3. The formation of oxygen deficient centers or even higher silicon aggregates by means of electron beam irradiation has been manifested already earlier, see e. g. [7,12,13]. Even Auger electron spectroscopy has clearly evidenced that oxygen is dissociated from SiO 2 due to electronic or thermal processes during electron beam excitation, see e. g. [14].…”

Section: Resultsmentioning

confidence: 97%

Si and Ge nanocluster formation in silica matrix

et al. 2007

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High resolution transmission electron microscopy, scanning transmission electron microscopy and cathodoluminescence have been used to investigate Si and Ge cluster formation in amorphous silicon dioxide layers. Commonly, cathodoluminescence emission spectra of pure SiO 2 are identified with particular defect centers within the atomic network of silica including the nonbridging oxygen hole center associated with the red luminescence at 650 nm (1.9 eV) and the oxygen deficient centers with the blue (460 nm; 2.7 eV) and ultraviolet band (295 nm; 4.2 eV). In Ge + ion implanted SiO 2 an additional violet emission band appears at 410 nm (3.1 eV). The strong increase of this violet luminescence after thermal annealing is associated with formation of low-dimension Ge aggregates like dimers, trimers and higher formations, further growing to Ge nanoclusters. On the other hand, pure silica layers were modified by heavy electron beam irradiation (5 keV; 2.7 A/cm 2 ) leading to electronic as well as thermal dissociation of oxygen and appearance of under-stoichiometric SiOx . This SiOx will undergo a phase separation and we observe Si cluster formation with a most probable cluster diameter of 4 nm. Such largely extended Si clusters will diminish the SiO 2 related luminescence and Si crystal related luminescence in the near IR appears.

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“…The luminescence band at 528 nm (2.35 eV) is very close to the luminescence at 2.3 eV observed by Trukhin in his study on the cathode ray luminescence property of thermal oxidation silica film. This luminescence band was ascribed to the self-trapped exciton [13]. But it is known to all that the exciton luminescence only appears at low temperature.…”

Section: Discussionmentioning

confidence: 99%

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

Zheng

Tang

et al. 2007

Journal of Luminescence

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Cathodoluminescence and IR absorption of oxygen deficient silica – influence of hydrogen treatment

Cited by 26 publications

References 14 publications

Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology

Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology

Si and Ge nanocluster formation in silica matrix

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

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