“…The InN films, however, contain a high density of dislocations [1], which seem to be still affecting their optical and electrical properties. Growth of nanocolumns is well known as a method to obtain highquality crystals free of dislocations [2][3][4]. Indeed, GaN nanocolumns were shown to exhibit stronger luminescence than GaN films, explained by nanocolumn's nature containing no or drastically reduced dislocations, which act as nonradiative recombination centers [3,5,6].…”