Cathodoluminescence Investigation of Residual Stress in Er3+:YAlO3Thin Films Grown on (110) SrTiO3Substrate by Metal-Organic Chemical Vapor Deposition

Toro, Roberta G.; Malandrino, Graziella; Fragalá, Ignazio L.; Wan, Keshu; Leto, Andrea; Pezzotti, Giuseppe

doi:10.1021/jp064396y

Cited by 14 publications

(7 citation statements)

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“…The authors described these multimetal liquid mixtures as “single sources” because it could be easily and cleanly evaporated with constant mass-transport rates and stoichiometric ratios. Thus, homogeneous and smooth films of LnAlO 3 (Ln = Y, , La, − Pr) were deposited on SrTiO 3 (100)/(110) or Si(100) substrates at temperature ranging from 900 to 1050 °C from a molten multicomponent source containing the [Ln(hfac) 3 (diglyme)] (Ln = Y, La, Pr) and Al(acac) 3 precursors. Films as thick as 600 nm could be fabricated upon tuning the deposition time.…”

Section: Applications As Precursors In Materials Sciencementioning

confidence: 99%

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

2015

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Section: Applications As Precursors In Materials Sciencementioning

confidence: 99%

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

2015

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“…MOCVD from Pr(hfa) 3 · diglyme − Al(acac) 3 Mixture. On the basis of previous studies − on the deposition of LaAlO 3 and YAlO 3 from multicomponent mixtures, where the second-generation fluorinated precursor acts as a solvent for the Al source, the potentiality of the Pr(hfa) 3 ·diglyme adduct to behave in a similar fashion and thus to deposit homogeneous PrAlO x films has been tested. Depositions have been carried out on Si (100) substrate at 450 °C in order to obtain amorphous films as required for microelectronics applications.…”

Section: Resultsmentioning

confidence: 99%

Comparison between First- and Second-Generation Praseodymium Precursors for the MOCVD Synthesis of Praseodymium Aluminate Thin Films

et al. 2007

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Praseodymium aluminum oxide (PrAlO x ) thin films have been grown by metal organic chemical vapor deposition (MOCVD) using two different multimetal sources consisting of mixtures of aluminum acetylacetonate (Al(acac) 3 ) with two praseodymium precursors, namely, the praseodymium hexafluoroacetylacetonate diglyme adduct (Pr(hfa) 3 ‚diglyme) and the praseodymium tetramethylheptanedionate (Pr(tmhd) 3 ). Smooth and amorphous films have been deposited on Si(100) substrates. Their chemical composition and microstructure, investigated by EDX measurements and TEM analyses, are deeply affected by the nature of the precursor mixture. Optimal structural and compositional properties are achieved with a Al(acac) 3 -Pr(hfa) 3 ‚diglyme mixture. Annealing procedures at 900 °C under an inert ambient atmospher do not affect the film crystallization. Preliminary electrical characterizations indicate a dielectric constant of about 12.

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“…In the case of doped systems the following sources have been added to the mixture: i) Ba(hfa) 2 •tetraglyme or Dy(hfa) 3 •diglyme (synthesized as the homologous Pr adduct) have been applied to dope BiFeO 3 at the A site with Ba 2+ or Dy 3+ , respectively; ii) Ti(tmhd) 2 (O‐iPr) 2 has been used as source for Ti doping at the B site. The used approach has been widely applied for the deposition of various perovskite type films, such as the high Tc superconducting La (1–x) Ba x CuO 4 , the host matrix of luminescent ion YAlO 3 and the ferromagnetic Pr (1–x) Ca x MnO 3 thin films.…”

Section: Mocvd Growth Of Bifeo3 and Doped‐bifeo3 Filmsmentioning

confidence: 99%

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Catalano

Spedalotto

Condorelli

et al. 2017

Adv Materials Inter

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reflects the promising applications of magnetoelectrics including magnetic field sensors, transducers, microwave devices, oscillators, phase shifters, heterogeneous read/write devices, spintronic devices, and so on. [4][5][6] Among various multiferroics, BiFeO 3 has attracted great attention in the last two decades, being the unique materials to have ferroelectric and magnetic transition temperatures well above room temperature. [7,8] These properties make BiFeO 3 very appealing for the above mentioned applications. In addition, doping BiFeO 3 thin films with rare-earth [9][10][11] represents one of the possible ways to obtain magnetoelectric systems. Recently, an electrical control of magnetic order by manipulating chemical pressure within the material has been achieved by lanthanum substitution in the antiferromagnetic ferroelectric BiFeO 3 . [12] BiFeO 3 oxide system has a slightly distorted perovskite structure. Perovskite structures of general formula ABO 3 play an important role due to their appealing and variegate functional properties. [13] In fact, a wide variety of substitutions at both A and B sites is responsible for the great flexibility of the perovskite structure giving rise to a very large number of derivatives with subtle variations in structure.Great efforts have focused on optimizing undoped BiFeO 3 to enhance the room temperature ferromagnetism. Among the various methods, ion substitution is the most useful and widely applied method to improve the multiferroic properties of BiFeO 3.[14] In particular, a lot of attention has been dedicated on doping of various elements like rare-earth, alkaline-earth metals and transition metals at the A or B site of bismuth ferrite to improve its magnetoelectric properties. [15][16][17] Considerable efforts have been devoted to the synthesis of BiFeO 3 at the nanoscale level [18] and to the study of its ferroelectric properties, but for the above mentioned applications BiFeO 3 is required in thin film forms. Up to date, BiFeO 3 films have been deposited on various substrates using physical vapor deposition techniques such as pulsed laser deposition (PLD), [19][20][21][22] molecular beam epitaxy [23,24] and sputtering. [25][26][27] Atomic layer deposition has been recently applied to the deposition of thin or ultrathin films of BiFeO 3 using a laminar layer approach, alternating Bismuth ferrite (BiFeO 3 ) materials have been the subject of intense research activity in the last two decades. The great interest arises from the BiFeO 3 being one of the rare multiferroic compounds in which ferroelectricity and magnetism coexist at room temperature. To improve these properties several studies have been reported on the doping at the A and/or B sites of the BiFeO 3 perovskite structure. In this short review, the attention is focused to the synthesis of BiFeO 3 and BiFeO 3 doped with Ba or Dy at the A site and Ti at the B site through Metal Organic Chemical Vapor Deposition (MOCVD). The applied MOCVD process consists of an in situ one step approach using a multi-metal s...

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Cathodoluminescence Investigation of Residual Stress in Er³⁺:YAlO₃Thin Films Grown on (110) SrTiO₃Substrate by Metal-Organic Chemical Vapor Deposition

Cited by 14 publications

References 40 publications

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

Comparison between First- and Second-Generation Praseodymium Precursors for the MOCVD Synthesis of Praseodymium Aluminate Thin Films

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

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Cathodoluminescence Investigation of Residual Stress in Er3+:YAlO3Thin Films Grown on (110) SrTiO3Substrate by Metal-Organic Chemical Vapor Deposition

Cited by 14 publications

References 40 publications

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

Metal–Organic Derivatives with Fluorinated Ligands as Precursors for Inorganic Nanomaterials

Comparison between First- and Second-Generation Praseodymium Precursors for the MOCVD Synthesis of Praseodymium Aluminate Thin Films

MOCVD Growth of Perovskite Multiferroic BiFeO3 Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Contact Info

Product

Resources

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Cathodoluminescence Investigation of Residual Stress in Er³⁺:YAlO₃Thin Films Grown on (110) SrTiO₃Substrate by Metal-Organic Chemical Vapor Deposition

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties