Cathodoluminescence investigations on CdTe and Cd0.96Zn0.04Te crystals

Radhakrishnan, J.; Salviati, G.

doi:10.1016/j.jlumin.2004.10.019

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Cited by 9 publications

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“…CL enables to investigate the change in the Zn concentration through the bandgap emission and the presence of Cd and Te vacancies through radiative transitions. [9][10][11] It is established that for example, Cd vacancies introduce a radiative center labeled A-band, which is related to a luminescence band centered around to 1.4 eV. Figure 2 shows typical CL spectra of the two samples.…”

Section: Resultsmentioning

confidence: 99%

Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Rodrı́guez-Fernández¹,

Carcélen²,

Hidalgo³

et al. 2009

Journal of Applied Physics

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Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10 19 at. / cm 3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence ͑CL͒, and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.

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Section: Resultsmentioning

confidence: 99%