Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Abstract

Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10 19 at. / cm 3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence ͑CL͒, and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.

High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals

“…Therefore it is essential to compensate these impurities and defects with the introduction of additional donor impurity into the CZT crystals. The additional donor impurity accomplishes a balance between electron and hole concentration and compensate the native defects presents into the CZT crystals 14 . Indium is considered one of the most promising dopants for CZT crystals in a doping concentration range of 1 × 10 19 at./cm 3 to 8 × 10 19 at./cm 3 15 .…”

Study of effects of polishing and etching processes on Cd1−Zn Te surface quality

“…The initial concentration of Bi in the ingot grown for this work was 1 Â 10 19 atm/cm 3 . A more detailed description on the crystal growth of CZT has been reported elsewhere [16,17].…”