Cathodoluminescence of SiO2 films

McKnight, Stephen W.; Palik, E. D.

doi:10.1016/0022-3093(80)90133-7

Cited by 58 publications

(28 citation statements)

References 8 publications

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“…16,17 It could be argued that the latter centers already exist to some extent in our oxides. However, CL is observed from electron-beam-damaged SiO 2 , 16 whereas none was observed here. Hence, the existing centers may not be the same as those from beam damage.…”

Section: Discussionmentioning

confidence: 97%

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Electroluminescence from mechanically damaged oxidized silicon

Yuan

Haneman

Andrienko

et al. 1998

Journal of Applied Physics

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We have found significant electroluminescence (EL), clearly visible in room light, to be produced from lightly oxidized Si wafers, which have been mechanically scratched, or indented with a diamond tip. The EL occurs in the visible and infrared ranges. Undamaged oxidized samples, where the oxide is chemically thinned to allow current from a top contact to pass, also show similar EL. However, damaged Si wafers that have only normal thin or no oxide, show negligible EL. A search for quantum-confined particles in indentation pits by scanning tunneling microscopy does not show any present. The results point strongly to the EL mechanism being related to the damage creating areas of optimum oxide thickness. The results are compared with those from spark-processed and laser-grooved silicon.

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Section: Discussionmentioning

confidence: 97%

“…15 It is also known that electron-beam-damaged silicon dioxide has luminescence bands centered around 450 nm ͑2.7 eV͒ and 650 nm ͑1.9 eV͒. 16,17 It could be argued that the latter centers already exist to some extent in our oxides. However, CL is observed from electron-beam-damaged SiO 2 , 16 whereas none was observed here.…”

Section: Discussionmentioning

confidence: 98%

Electroluminescence from mechanically damaged oxidized silicon

Yuan

Haneman

Andrienko

et al. 1998

Journal of Applied Physics

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“…The use of cathodoexcitation for study of SiO 2 films on silicon substrate has revealed many interesting properties of luminescence centers [4][5][6][7][8][9][10][11][12][13]. The main luminescent centers in SiO 2 films at room temperature are the red luminescence R (1.85 eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (2.7 eV) and a UV band (4.4 eV).…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

Trukhin

Jansons

Fitting

et al. 2003

Journal of Non-Crystalline Solids

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“…The room temperature CL spectrum (not shown here) revealed a broad peak centered at about 2.34 eV, related to the indirect band-gap transition in bSiC, and an intense blue band at about 2.68 eV. Blue luminescence from cubic SiC whiskers and nanocrystallites has been reported in the literature [11], but the contribution of an SiO 2 related emission in this spectral region [12] also should be considered. This assignment is supported by TEM observations (see Fig.…”

Section: Resultsmentioning

confidence: 84%