Cathodoluminescence spectra of surface-oxidized GaN crystallites

Abstract

Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate GaN crystallites covered with gallium oxides were fabricated and their cathodoluminescence ͑CL͒ spectra were observed. The intensity of CL spectra observed from the GaN crystallites with the oxides was higher than that in the case without the oxides. This is due to the reduction of surface recombination and carrier confinement. Electroluminescent devices operating in the UV spectral region were also fabricated using the GaN crystallites covered with gallium oxides.