Cathodoluminescence study of extended defects in hydrothermal ZnO crystals

Extended-Defect-Related Photoluminescence Line at 3.33 eV in Nanostructured ZnO Thin Films

“…By performing cathodoluminescence measurements, it has been suggested that the 3.33 eV line may rather be associated with extended defects. 5,13,14) This assignment is supported by the substantial investigation recently published by Wagner et al 15) The discrepancy between the localization energy and the activation energy of the 3.33 eV line has been pointed out for ZnO bulk crystal, revealing the limitations of the effective-mass standard approach to model the involved defect complexes. 15) An innovative model in which one of the charge carriers is more weakly bound to the defect has been proposed.…”

IR and Raman Spectra Properties of Bi<sub>2</sub>O<sub>3</sub>-ZnO-B<sub>2</sub>O<sub>3</sub>-BaO Quaternary Glass System

“…The second group, between 800 and 1200 cm −1 , is due to B-O bond stretching in tetrahedral BO 4 units, and the third group, around 700 cm −1 , is due to the bending of B-O-B connections in the borate network [20]. Characteristic absorption bands for crystalline ZnO were identified at ~430 and ~520 cm −1 and are attributed to Zn-O bond vibrations in tetrahedral ZnO 4 units [23].…”