Cathodoluminescence study of inductively coupled plasma (ICP) etched InP waveguide structures: Influence of the ridge dimension and dielectric capping

Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

“…[10][11][12][13] One can also create and excite such defect states using electron irradiation to study their nature and behavior. [14][15][16][17] Cathodoluminescence studies of nanoscale structures are on the increase as well. [18][19][20][21] In the last decade, CL has gained attention among the nanophotonics community, mostly centered on studies of plasmonic systems, although studies on dielectrics are proliferating.…”

The effect of F2attachment by low-energy electrons on the electron behaviour in an Ar/CF4inductively coupled plasma

“…A CF 4 -based plasma, sustained in a low-pressure inductively coupled plasma (ICP) reactor, is widely used in the microelectronic fabrication industry, i.e. for dielectric etch and film deposition [1][2][3]. Many studies have been carried out to investigate the reactive plasma properties and the surface reaction kinetics in etching and deposition processes [4][5][6][7].…”

Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study

“…For those studies, the etching was performed on bulk InP samples. The formation of point defects (or defect complexes) related to the operating conditions of the dry etching process itself, but also to the nature of the material used for the masking layer (SiO x or SiN x ), was observed ([8]- [9]). The point defects observed on the CL spectra have an optical signature in the band gap; in addition an increase in the non-radiative recombinations correlated to the spatial distribution of these defects is also seen on the CL images.…”