Cathodoluminescent characteristics of ZnGa2O4 phosphor grown by radio frequency magnetron sputtering

Abstract

Low voltage cathodoluminescent characteristics of ZnGa2O4 phosphor grown by rf magnetron sputtering have been investigated from 300 to 700 nm. The effects of substrate heating and annealing treatment on the luminescent characteristics are also studied. A blue cathodoluminescent emission peaked at 470 nm is observed. Better luminescent properties are achieved on the films which have crystal structure with a standard powder x-ray diffraction pattern of ZnGa2O4. The effect of the strength of the ligand field on the resultant energy levels for the ZnGa2O4 phosphor is investigated. Low-voltage phosphor films with excellent cathodoluminescent characteristics have been successfully developed in this research.

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

“…For comparison, the CL spectra were normalized by the intensity at 360 nm. The luminescence consists of three peaks at 360, 450 and 550 nm, which are attributed to different defects in ZnGa 2 O 4 [38][39][40]. At 1.5 kV, the 450 and 550 nm bands are stronger than that at 360 nm.…”

UV and X-ray excited luminescence of Tb3+-doped ZnGa2O4 phosphors

“…Zinc gallate (ZnGa 2 O 4 ) has attained much attention since last decade as a promising phosphor used in thin film electroluminescence display (TFELD) [1][2][3], field emission display (FED) and vacuum fluorescent display (VFD) [4,5]. As an oxide-based phosphor, ZnGa 2 O 4 exhibits higher chemical stability under high electric field and electron bombardment than conventional sulphide-based phosphors.…”

Synthesis of In-doped ZnGa2O4 nanobelts and its enhanced cathodoluminescence

“…3 shows the typical room temperature CL spectra of an individual single-crystalline In-doped ZnGa 2 O 4 nanobelt (curve 1) and a pure ZnGa 2 O 4 nanowire (curve 2) prepared under the same conditions except for no introduction of In. For the curve 1, the two strong emission peaks centered at 409 and 487 nm and a weak shoulder centered at 440 nm correspond to the transitions from 4 T 1 to 4 A 2 , 2 E B to 4 A 2 , and 4 T 2A to 4 A 2 energy levels of the Ga 3+ , respectively [6]. For a better inspection of the emission properties, the curve 2 was enlarged, as shown in the inset of Fig.…”

“…high-chemical and thermal stability which is crucial for vacuum fluorescent displays and field emission displays [6]; (iv) it has good cathodoluminescence (CL) characteristics at low voltage [7,8]. By now, ZnGa 2 O 4 nanowires have been synthesized by different methods [9,10].…”