Low voltage cathodoluminescent characteristics of ZnGa2O4 phosphor grown by rf magnetron sputtering have been investigated from 300 to 700 nm. The effects of substrate heating and annealing treatment on the luminescent characteristics are also studied. A blue cathodoluminescent emission peaked at 470 nm is observed. Better luminescent properties are achieved on the films which have crystal structure with a standard powder x-ray diffraction pattern of ZnGa2O4. The effect of the strength of the ligand field on the resultant energy levels for the ZnGa2O4 phosphor is investigated. Low-voltage phosphor films with excellent cathodoluminescent characteristics have been successfully developed in this research.

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN)128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280 320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect. AlGaN, photodiode, ultraviolet FPA, solar-blind Ozone layer intensively absorbs 240 to 285 nm incidence [1] , when the sunshine goes through stratospheric. There is almost no UVC (200 280 nm) band radiation existing below stratospheric, so UVC band can be called solar-blind band [2] . Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful in communication, UV radiation detection, weak incidence UV imaging system, 3D UV Laser Radar etc. Developed countries send high-orbit satellites to perform UV radiation detection aiming at studying Origin of The Universe.Wide band gap materials, especially III-V nitride materials, have attracted extensive interest more and more for their applications in making light emitting devices, high-power and high-temperature electronic devices, and ultraviolet detectors. The use of III-V nitrides for photoelectric detector applications is expected to yield high responsivity with low dark currents over a wide range of temperatures. GaN and A1N have direct band gaps of 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, with corresponding cutoff wavelengths from 365 to 200

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