Cation Distribution of the Transparent Conductor and Spinel Oxide Solution Cd1+xIn2−xSnxO4

Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

“…In our experiments, we found the best oxygen concentration is 4.29%, the resistivity of the films is 2.95 Â 10 À4 V cm, the carrier concentration is 3.508 Â 10 20 cm À3 and Hall mobility is as high as 60.32 cm 2 / V s. The resistivity of the films prepared by DC reactive magnetron sputtering is lower than that prepared by RF reactive sputtering [6], but slightly higher than that prepared by RF reactive magnetron sputtering and DC reactive sputtering [5,7], while the Hall mobility of the films prepared by DC reactive magnetron sputtering is higher than that prepared by other techniques [5][6][7]. As the demand for thinner and higher performance devices increases, future TCOs are demanded to have not only lower resistivity but also higher optical transparency [4]. The resistivity is inversely proportional to the carrier concentration and mobility; nevertheless, higher carrier concentration will decrease optical transparency.…”

“…Usually high conductivity of many TCOs such as Sn-doped In 2 O 3 (ITO), Sb-doped SnO 2 and Al-doped ZnO is achieved by doping which can increase the carrier density. However, the increase of carrier density deteriorates optical transparency [3,4]. Ternary oxides thin films such as CdIn 2 O 4 and Cd 2 SnO 4 can be n-type materials without any doping.…”

Cation distribution and crystallographic characterization of the quaternary spinel system Mg Co1−Cr Fe2−O4

“…The knowledge of the crystallography including the cation distribution is thus very important for controlling and forecasting the various properties in spinels. In view of that, the crystallography including site preferences of cations in spinels have been systematized intensively and increasing emphasis are given on the exact cation distributions in complex systems [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. In the present work we report crystallographic characterization and the cation distribution in the spinel system Mg x Co 1−x Cr x Fe 2−x O 4 (x = 0.0, 0.25, 0.50, 0.75 and 1.0) consisting of four different cations of which Co, Fe and Cr have close atomic numbers.…”

Optical Properties of Er3+-Doped CdIn2O4 and CdIn2O4 Crystals

“…The direct energy band gap (E g ) can be obtained when n = 2. .866 eV at 294 K, close to 3.0 eV [11]. Figure 3 shows the photoluminescence spectra of the CdIn 2 O 4 and CdIn 2 O 4 :Er 3+ crystals, measured at wavelengths of 250~950 nm at 294 K. For the CdIn 2 O 4 crystals (Figure 3(a)), the photoluminescence peak position changed with increasing crystal growth temperature.…”