Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices

Yang, Xiang; Choi, Byung Joon; Chen, Albert B. K.; Chen, I‐Wei

doi:10.1021/nn3054544

Cited by 31 publications

(24 citation statements)

References 53 publications

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“…Removing the ZnO NR sample from the water revealed that the modifi ed substrate had not been wetted by the water, while it can be fatal to electrical circuits that the unmodifi ed sample was completely wet. [ 35 ] Well-aligned, high-density, pillar-like ZnO NRs were successfully grown during the preparation of the device, as shown in the FESEM images (Figure 2 c). The memristive switching device was characterized by patterning Au top electrodes onto the NR array prior to surface treatment.…”

Section: Doi: 101002/adma201303017mentioning

confidence: 87%

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

et al. 2013

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A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

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Section: Doi: 101002/adma201303017mentioning

confidence: 87%

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

et al. 2013

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“…Figure 4h shows the switching with single-atomic change, where the set and reset is feasible with a minimum energy of ±650 meV. However, there are several other effects such as the quality of the metal/oxide interface, quality of the environment, [43][44][45][46][47] and the material deposition technique that can have an influence on the conductance levels in ECBJ devices. Here, we must mention that the conductance of the devices can be changed sharply to a half integer value (i.e., 0.5 G o ) as shown in Figure S5d, Supporting Information.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Banerjee

Hwang

2019

Adv Elect Materials

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electron charge and h is the Planck constant. [6] Electronic switches with atomicsized functional building blocks are the main driving force of modern nanotechnology. The design of atomic dimensional memory devices is limited by the lithographic bottleneck. Nevertheless, the origin of atomic contact in nanoscale architectures is being investigated. [7] The conductive bridge RAM device with quantized conductance (QC) effect proposed by Terebe et al., [8] was based on the fabrication of a gap-type Pt/ nano-gap/Ag 2 S/Ag structure. A small operating voltage of ±600 mV can switch the device between the "OFF" and "ON" states. When a device changes its resistance from high to low, it is usually known as "set"; the reverse change is known as "reset". The QC effect is suitable to realize multiple levels in devices and has been studied in both electrochemical metallization type [9][10][11][12][13][14] and valance change memory type [15,16] gap-less RRAM. In most cases, switching is the after-effect of a stress dependent virginity breakdown, which can consolidate the CF for switching operations. Because the behavior of the CF of conductive bridge RAM is considered to be an example of atomic-switching, further discussion is mainly focused on conductive bridge RAM type devices. Higher initial stress injects more cations into the switching oxide layer that results in poor control over the reset process, resulting in abrupt state transition, and atomic conductance instability. [9][10][11][12][13][14] In another approach, single-atom memory has been proposed for mechanically controllable break junctions (MCBJs), [17] which are a kind of electronic device formed by two knife-edged metal wires placed with a nanometer sized gap, as shown in Figure 1a. MCBJs are well known as atomic or single molecular junction, and have even been investigated to in the context of control of quantum interferences in graphene. [18,19] In an MCBJ, when the two wires are curved, broadening the gap, the contact is broken, and the reverse order experiences an atomic-contact at the break junction. Break junctions are a possible approach to the fabrication of atomic switches. However, in reality, for an electronic device, such design is burdensome due to exorbitant lithographic processes. It is possible to prepare a break junction by electrically controlling the ion migration process in conductive bridge RAM devices, as the switching mechanism is driven by the formation of metallic wire like CF. Although the concept of QC in conductive bridge RAM has been investigated for over a decade, precise and reliable atomic-level control Atomic-level control of conductance in a Cu/Ti/HfO 2 /TiN-based electrically controllable break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack engineering and refined electrical operation. Control over bias-induced ion migration is the key to forming the ECBJ. Precise atomic-level control is accomplished with an optimized high temperature forming (OHTF) scheme. OHTF-controlled single-atomic switch...

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“…It has been demonstrated that in many cases moisture (water reduction) is able to provide this counter electrode reaction, thus playing a crucial role for device operation and reliability. [50][51][52] Protons and moisture have also been considered as essential parts of TiO 2 -based VCM [53] and NiO-based TCM devices. [54] Thus, the choice of solid electrolyte determines the ReRAM cell's stability and the reproducibility of the switching characteristics and the device performance in general.…”

Section: Impact Of the Solid Electrolyte Materialsmentioning

confidence: 99%

Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

2013

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Resistive switching memories (RRAMs) are an emerging research field, which is currently of focused interest for both the interdisciplinary scientific community and industry. RRAMs are nano‐electrochemical systems with great potential as a disruptive technology for the semiconductor industry as well as for a number of applications such as memory, logic and analog circuits, memristive operations, neuromorphic applications and computing. The present review aims to present the current state‐of‐the‐art knowledge on redox‐based resistive switching RRAMs, highlighting the role of the interfaces, discussing the electrochemical kinetics during formation of nanofilaments, and to relate them to the more fundamental issue of microscopic description of electrochemical processes at the atomic scale.

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Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices

Cited by 31 publications

References 53 publications

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

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