Cavity suppression in nitride based superluminescent diodes

Kafar, Anna; Stanczyk, Szymon; Grzanka, S.; Czernecki, R.; Leszczyński, M.; Suski, T.; Perlin, P.

doi:10.1063/1.4704147

Cited by 35 publications

(33 citation statements)

References 9 publications

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“…This devices are fabricated using the technology developed for LDs (separate confinement heterostructure with a ridge waveguide). The only difference is that the waveguide is defined in a way that prevents light oscillation in the device [14]. SLDs fabricated in IHPP PAS are based on j-shape waveguide geometry, which is shown in Fig.…”

mentioning

confidence: 99%

Nitride-based laser diodes and superluminescent diodes

Perlin¹,

Stanczyk²,

Kafar³

et al. 2014

Photon. Lett. Poland

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mentioning

confidence: 99%

Nitride-based laser diodes and superluminescent diodes

Perlin¹,

Stanczyk²,

Kafar³

et al. 2014

Photon. Lett. Poland

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“…However, these are complex systems, and it has already been identified that if broader bandwidths can be reached for GaN SLEDs, sub-cellular resolution is possible [22], with an enhancement in lateral resolution also likely. Although methods of cavity suppression have been proposed [13], [23], only limited research has been conducted on the use and role of absorbers in GaN SLEDs. This graph shows that the axial resolution of an OCT system can be improved by using a short wavelength light source with a broad emission spectrum.…”

Section: Introductionmentioning

confidence: 99%

“…As pico-projectors and FOGs require light sources with high output powers and only modest (>1 nm) bandwidths, to date the development of GaN SLEDs has aimed at increasing device tolerances to high current densities, through improved thermal management and heat dissipation [12], or methods of feedback suppression to increase the lasing threshold [13]. In the quest for ever-increasing output powers, high reflectivity (HR) coatings have been applied to the rear facets of several reported SLEDs [14].…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride light sources for optical coherence tomography

et al. 2017

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The advent of optical coherence tomography (OCT) has permitted high-resolution, non-invasive, in vivo imaging of the eye, skin and other biological tissue. The axial resolution is limited by source bandwidth and central wavelength. With the growing demand for short wavelength imaging, super-continuum sources and non-linear fibre-based light sources have been demonstrated in tissue imaging applications exploiting the near-UV and visible spectrum. Whilst the potential has been identified of using gallium nitride devices due to relative maturity of laser technology, there have been limited reports on using such low cost, robust devices in imaging systems.A GaN super-luminescent light emitting diode (SLED) was first reported in 2009, using tilted facets to suppress lasing, with the focus since on high power, low speckle and relatively low bandwidth applications. In this paper we discuss a method of producing a GaN based broadband source, including a passive absorber to suppress lasing. The merits of this passive absorber are then discussed with regards to broad-bandwidth applications, rather than power applications. For the first time in GaN devices, the performance of the light sources developed are assessed though the point spread function (PSF) (which describes an imaging systems response to a point source), calculated from the emission spectra. We show a sub-7µm resolution is possible without the use of special epitaxial techniques, ultimately outlining the suitability of these short wavelength, broadband, GaN devices for use in OCT applications.

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“…In general, cavity feedback suppression in SLDs is achieved by reducing the reflectivity of both 19 or one facet. 23 The most common approaches to prevent lasing inside the cavity are using ultralow reflectivity antireflection (AR) coatings, 24 adding a highly active 25 or a passive absorber 26 section into the resonator, or tilting the waveguide with respect to the cavity facets. 19 An AR-coating can only decrease the reflectivity to 10 À4 at a single wavelength; a multilayer AR-coating can reduce reflectivity over a relatively broad wavelength range, but the fabrication of multilayer AR-coatings makes the process difficult.…”

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confidence: 99%

GaSb superluminescent diodes with broadband emission at 2.55 μm

Zia

Viheriälä

Koivusalo

et al. 2018

Applied Physics Letters

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We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

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Cavity suppression in nitride based superluminescent diodes

Cited by 35 publications

References 9 publications

Nitride-based laser diodes and superluminescent diodes

Nitride-based laser diodes and superluminescent diodes

Gallium nitride light sources for optical coherence tomography

GaSb superluminescent diodes with broadband emission at 2.55 μm

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