CD and profile metrology of EUV masks using scatterometry based optical digital profilometry

Cho, Sung Yong; Yedur, Sanjay; Kwon, Michael; Tabet, Milad

doi:10.1117/12.686478

SPIE Proceedings

2006

DOI: 10.1117/12.686478

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CD and profile metrology of EUV masks using scatterometry based optical digital profilometry

Sung Yong Cho

Sanjay Yedur²,

Michael Kwon³

et al.

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Phase shift mask etch process development utilizing a scatterometry-based metrology tool

Plumhoff

Gray

2008

SPIE Proceedings

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Phase, along with defect levels and CD, must be closely monitored on 45nm technology node masks. The final phase shift of a mask is highly dependent on the ability of the etch tool to stop at precisely the correct depth. Developing etch processes and endpoint recipes for successful phase shift processing depends on rapid and accurate measurement of etch depth. In many mask shops, these measurements are made by either direct phase measurement tools or atomic force microscopes (AFM). These tools have relatively low throughput. In the case of the direct phase measurement tool, the large measurement spot size precludes the measurement of the small features most interesting to mask makers. A need exists for a relatively fast measurement tool that can be applied to features <1µm in size.As part of Oerlikon USA's continuous etch process improvement efforts, the etch depth measurement capabilities of a scatterometry based metrology tool were explored. Phase shift masks (one EAPSM, one AAPSM) were created to act as standards for our experiments. Regions of each mask were etched to various depths using an Oerlikon Mask Etcher system, and then measured with both a commercial AFM and an n&k Technology 1700-RT scatterometry tool. Using this data, recipes capable of measuring quartz trench features, partially-etched MoSi trench features, and bulk MoSi films were developed on the n&k 1700-RT. Phase uniformity data taken from actual etch experiments will be provided, as well as data showing the repeatability of each system, and a comparison of the relative measurement times.

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Phase shift mask etch process development utilizing a scatterometry-based metrology tool

Plumhoff

Gray

2008

SPIE Proceedings

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EUV and DUV scatterometry for CD and edge profile metrology on EUV masks

Bodermann

Wurm

Diener

et al. 2009

25th European Mask and Lithography Conference

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Photoresist qualification using scatterometry CD

et al. 2012

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As the semiconductor industry advances to smaller design rules, Photoresist performance is critical for the tight lithography process. Critical Dimension (CD), Side Wall Angle (SWA) and Photoresist height, which are critical for the final semiconductor patterning, depend on the Photoresist chemistry. Each Photoresist batch has to be qualified to verify that it can achieve the required quality specifications.Photoresist qualification is done by exposing Photoresist and monitoring outcome after developing.In this work, Archer 300LCM scatterometry-based Optical CD (OCD) was evaluated using Dow 193 Immersion Top Coat Free Photoresist and Anti Reflection Layers (ARL). As part of the sensitivity analysis, changes in Photoresist thickness, ARL thickness and Photoresist formulation were evaluated.Results were compared to CD-SEM measurements. The CD sensitivity was evaluated on two grating dense line and space features with nominal Middle CD (MCD) values of 37nm and 75nm. Sensitivity of the OCD for Photoresist parameters was demonstrated.

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CD and profile metrology of EUV masks using scatterometry based optical digital profilometry

Cited by 3 publications

References 0 publications

Phase shift mask etch process development utilizing a scatterometry-based metrology tool

Phase shift mask etch process development utilizing a scatterometry-based metrology tool

EUV and DUV scatterometry for CD and edge profile metrology on EUV masks

Photoresist qualification using scatterometry CD

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