CdS Thin Films Deposited by CBD Method on Glass

Abstract

CdS thin films were prepared by chemical-bath-deposited method and the effect of temperature and time on the properties of CdS thin films was studied. Independent of the deposited temperature, the growth was mainly controlled by the ion-by-ion growth mechanism at the beginning of the film deposition, then the cluster-by-cluster mechanism came to be dominant. The growth rate increased faster with the increasing of temperature until the thickness reached the limitation, then thickness instead become thinner. The scanning electron microscope results revealed that the morphology of the CdS film changed from pinholes to rough, inhomogeneous surface with increasing deposition time and deposition temperature. The Xray diffraction results showed the film structure was a mixture of two phases: hexagonal and cubic, and it was very important to controll deposition time to the film's crystal phase. All films in depth of approximate 100 nm existed above 65% transmittance, the absorption edge became "red-shift" with temperature rising. At 60 and 70 • C, with 20 min deposited-time, the energy band gap was more than 2.42 eV and decreased with time, while at 80 and 90 • C, the energy band gap was less than 2.42 eV and increased little when the time changed from 10 min to 15 min at 80 • C.

Effect of Bath Temperature on Optical and Morphology Properties of CdS Thin Films Grown by Chemical Bath Deposition

“…Furthermore, some particles agglomerated resulting in protrusion can also be seen. Similar results have been reported by X. W. He [29].…”

“…As seen from the figure, the film thickness linearly increases with increase in bath temperature. It increases from 73.84 nm to 117.28 nm when the bath temperature increased from 65 0 C to 85 0 C. It has been reported that too thick CdS films lead to the reduction of photon into the absorber layer, while too thin is hard to synthesize smooth films with few pinholes [29]. However, in the present study we have successfully controlled the CdS film thickness simply by controlling the bath temperature in CBD method.…”

Solution-Processed ZnxCd1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

“…A similar morphology was observed for the CBD-CdS thin film in previous studies. 36,37 In contrast, a uniform distribution of large spherical grains was observed for the SILAR-CdS thin film, as evident from Figure 2b. The difference in morphology between the CBD-and SILAR-CdS films could be attributed to the different deposition methods and related growth mechanisms.…”

“…The difference in morphology between the CBD-and SILAR-CdS films could be attributed to the different deposition methods and related growth mechanisms. CBD-CdS follows an overall concurrent growth mechanism, particularly for a prolonged reaction time, 36 whereas SILAR-CdS follows a layer-by-layer growth with a successive stepwise mechanism. The average thickness of the Zn x Cd 1−x S thin films for 30 SILAR cycles (cross-sectional images in Figure 2a−c) was found to be ∼60− 70 nm, which are quite similar to that of the CBD-CdS layer formed in this study (Figure 2d, ∼59 nm).…”

Propagation Characteristics of Ultrasonic Guided Waves in Grouted Rockbolt Systems with Bond Defects under Different Confining Conditions

“…The occurrence environment of a deep rock mass is complex when it is in a state of "three highs and one disturbance" (high ground stress, high seepage pressure, high earth temperature and mining disturbance) [1]. A rockbolt acting in the rock mass is always subjected to the combined action of the pull-out load and confining pressure.…”