2012
DOI: 10.1016/j.tsf.2011.12.061
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CdS thin films growth by ammonia free chemical bath deposition technique

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Cited by 35 publications
(13 citation statements)
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“…Hereafter, this method was adopted to prepare the CdS thin films presented in this study. According to previous works, the quality of CdS thin films prepared by the CBD technique depends strongly on various synthesis parameters such as the deposition time [23], the bath and annealing temperature [24,25], the ammonia agent complex [26], and the concentrations of the chemical reagents [27], Unfortunately, when seeking to synthesize CdS thin films by CBD, two major problems are generally encountered: (i) the postannealing treatment, which is a classical essential step for film crystallinity improvement, usually inducing a strong Cd thermal diffusion [28] and prevents the CdS deposition to be extended to flexible substrates [29], and (ii) the film thickness limitation, which is attributed to the solution supersaturation phenomenon [23,30]. To overcome these problems, the synthesis process has been carried out in several runs.…”
Section: Introductionmentioning
confidence: 99%
“…Hereafter, this method was adopted to prepare the CdS thin films presented in this study. According to previous works, the quality of CdS thin films prepared by the CBD technique depends strongly on various synthesis parameters such as the deposition time [23], the bath and annealing temperature [24,25], the ammonia agent complex [26], and the concentrations of the chemical reagents [27], Unfortunately, when seeking to synthesize CdS thin films by CBD, two major problems are generally encountered: (i) the postannealing treatment, which is a classical essential step for film crystallinity improvement, usually inducing a strong Cd thermal diffusion [28] and prevents the CdS deposition to be extended to flexible substrates [29], and (ii) the film thickness limitation, which is attributed to the solution supersaturation phenomenon [23,30]. To overcome these problems, the synthesis process has been carried out in several runs.…”
Section: Introductionmentioning
confidence: 99%
“…CdS is a direct band gap semiconductor, on account of its intermediate band gap between CIGS and TCO, high absorption coefficient, low resistivity, and easy ohmic contact [13]. CdS has a band gap of approximately 2.4 eV, which is appropriate for accepting a good portion of the incident light by the p-type CIGS.…”
Section: Introductionmentioning
confidence: 99%
“…It was observed from the previous results that the decrease in the concentration of precursors resulted in the decrease of particle size on the nonactivated glass substrate. This was due to the slow kinetic transport during heterogeneous nucleation growth, which initiated an ion-by-ion mechanism of growth instead of the cluster-by-cluster mechanism [4]. Hence, in addition to the seed layer formation and to have ion-by-ion growth mechanism, the concentration of the solution was reduced.…”
Section: Preparation Of Thin Filmsmentioning
confidence: 99%