Effect of annealing treatment on CdS/CIGS thin film solar cells depending on different CdS deposition temperatures

Lee, Sol; Lee, Eun Soo; Kim, Tae Yeon; Cho, Jun Sik; Eo, Young Joo; Yun, Jae Ho; Cho, Ara

doi:10.1016/j.solmat.2015.05.052

Cited by 75 publications

(40 citation statements)

References 21 publications

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“…It can be explained by the grain size of the layer which is under the CdS film. The d-spacing value of the highest intensity CdS peak equals 0.335 nm (Table 4) was found to be similar to the results obtained by Lee et al [40] with the CBD method. The lattice mismatch of the obtained heterojunction is very small, which creates preferable conditions for CIGS-based device fabrication.…”

Section: Discussionsupporting

confidence: 88%

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Gulkowski

Krawczak

2020

Coatings

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Thin film Cu(In,Ga)Se2 (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se2 film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed.

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Section: Discussionsupporting

confidence: 88%

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Gulkowski

Krawczak

2020

Coatings

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“…However, the short‐circuit current density ( J sc ) in the CZTS cells was insufficiently high (17.3 mA/cm 2 ). Four main factors contribute to the low J sc value: (i) a high positive conduction‐band offset (CBO) at the interface between the buffer and CZTS layers ; (ii) increased interface recombination at the interface between the buffer and the CZTS layers , (iii) a low external quantum efficiency (EQE) for short‐wavelength light because of absorption losses caused by the CdS buffer layer ; and (iv) a low EQE for long‐wavelength light because of the low diffusion length of minority carriers (low mobility and/or low life time of excited electrons) . However, X‐ray photoelectron spectroscopy (XPS), pump/probe ultraviolet photoelectron spectroscopy (UPS), and UPS/inverse photoelectron spectroscopy have previously revealed that the CBO value at the interface between the CdS and CZTS layers can lead to high‐performance cells.…”

Section: Introductionmentioning

confidence: 99%

Cu₂ZnSnS₄ photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition

Tajima

Umehara

Hasegawa

et al. 2016

Progress in Photovoltaics

110

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To improve the photovoltaic properties of Cu 2 ZnSnS 4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40 nm) followed by high temperature annealing (603 K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400-800 nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80 V by appropriately tuning the composition of the CZTS layers.

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“…CBD additionally takes advantage over ALD by its non-vacuum, large-area deposition capability, which makes CBD preferable for the industry. Hence, CBD has become regarded as the most robust industrial deposition method for CIGS buffer layer for decades [ 9 , 10 , 11 ]. Nonetheless, CBD suffers from issues such as poor crystallinity, high concentration of impurities, and requirements for post process, waste liquid treatment.…”

Section: Introductionmentioning

confidence: 99%

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

et al. 2017

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Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

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Effect of annealing treatment on CdS/CIGS thin film solar cells depending on different CdS deposition temperatures

Cited by 75 publications

References 21 publications

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Cu₂ZnSnS₄ photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

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Effect of annealing treatment on CdS/CIGS thin film solar cells depending on different CdS deposition temperatures

Cited by 75 publications

References 21 publications

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

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Cu₂ZnSnS₄ photovoltaic cell with improved efficiency fabricated by high‐temperature annealing after CdS buffer‐layer deposition